Submicrometer Hall devices fabricated by focused electron-beam-induced deposition

Boero, G.; Utke, I.; Bret, T.; Quack, N.; Todorova, M.; Mouaziz, S.; Kejik, P.; Brugger, J.; Popovic, R. S.; Hoffmann, P.
January 2005
Applied Physics Letters;1/24/2005, Vol. 86 Issue 4, p042503
Academic Journal
Hall devices having an active area of about (500 nm)2 are fabricated by focused electron-beam-induced deposition. The deposited material consists of cobalt nanoparticles in a carbonaceous matrix. The realized devices have, at room temperature, a current sensitivity of about 1 V/AT, a resistance of a few kilo-ohms, and can be biased with a maximum current of about 1 mA. The room-temperature magnetic field resolution is about 10 μT/Hz1/2 at frequencies above 1 kHz.


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