TITLE

Surface-diffusion-controlled incorporation of nanosized voids during hydrogenated amorphous silicon film growth

AUTHOR(S)
Smets, A. H. M.; Kessels, W. M. M.; van de Sanden, M. C. M.
PUB. DATE
January 2005
SOURCE
Applied Physics Letters;1/24/2005, Vol. 86 Issue 4, p041909
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The incorporation of nanosized voids during hydrogenated amorphous silicon film growth is studied by measurements of the film mass density and the hydrogen present at the void surfaces. The observed dependence of the density of nanosized voids on the growth flux and substrate temperature is explained in terms of a surface-diffusion-controlled void incorporation model. From this analysis, an activation energy for surface diffusion in the range of 0.77–1.05 eV has been found, a value which is in agreement with the activation energy obtained from the analysis of the surface roughness evolution during growth in a previous study.
ACCESSION #
15925536

 

Related Articles

  • Metal induced hydrogen effusion from amorphous silicon. Ohmi, Hiromasa; Yasutake, Kiyoshi; Hamaoka, Yoshinori; Kakiuchi, Hiroaki // Applied Physics Letters;12/10/2007, Vol. 91 Issue 24, p241901 

    Hydrogen effusion from hydrogenated amorphous silicon (a-Si:H) films, induced by various metal layers (Al, Ni, Cu, Ge, Cr, Au, Ag, Fe, and Sn), has been studied by temperature programed desorption spectroscopy. Significant reduction of the effusion temperature is observed in the presence of Cr,...

  • Localization of the Si-H stretch vibration in amorphous silicon. Rella, C.W.; van der Voort, M.; Akimov, A.V.; van der Meer, A.F.G.; Dijkhuis, J.I. // Applied Physics Letters;11/8/1999, Vol. 75 Issue 19, p2945 

    Focuses on the transient transmission and transient grating lifetime measurements performed on the Si-H stretch mode as a function of temperature and wavelength using intense infrared pulses from a free electron laser. Microscopic structure and dynamics in the vicinity of the Si-H bond; Highly...

  • 'Fast' and 'slow' metastable defects in hydrogenated amorphous silicon.  // Applied Physics Letters;7/19/1993, Vol. 63 Issue 3, p400 

    Examines the metastable defect in hydrogenated amorphous silicon. Analysis on the two-step light soaking experiment at high and low intensities; Establishment of a rate equation system for all defect components; Use of rate equation system to describe the defect kinetics.

  • Difference in light-induced annealing behavior of deposition- and light-induced defects in.... Hata, N.; Matsuda, A. // Applied Physics Letters;10/4/1993, Vol. 63 Issue 14, p1948 

    Examines the light-induced annealing (LIA) of deposition-induced defects in hydrogenated amorphous silicon. Description of LIA; Efficacy of the light-induced defects; Effects of thermal annealing.

  • Anomalous substrate and annealing temperature dependencies of heavily boron-doped hydrogenated amorphous silicon. Jang, Jin; Kim, Sung Chul // Journal of Applied Physics;3/1/1987, Vol. 61 Issue 5, p2092 

    Presents information on a study which measured the substrate and annealing temperature dependencies of optical gap, hydrogen concentration, inverse slope of Urbach edge, dark conductivity and photoconductivity for one percent boron-doped hydrogenated amorphous silicon (a-Si:H). Anomalous...

  • Anomalous deposition rate dependence of hydrogenated amorphous silicon on substrate temperature. Ishihara, Shin-ichiro; Kitagawa, Masatoshi; Hirao, Takashi // Journal of Applied Physics;10/1/1987, Vol. 62 Issue 7, p3060 

    Presents a study that investigated the deposition rate dependence of hydrogenated amorphous silicon prepared by capacitively coupled radio frequency glow discharge upon substrate temperature. Background on the required substrate temperature for high-quality hydrogenated amorphous silicon;...

  • Saturation behavior of the defect density in hydrogenated amorphous silicon by continuous and.... Jong-Hwan Yoon; Kim, H.L. // Applied Physics Letters;5/29/1995, Vol. 66 Issue 22, p3021 

    Evaluates the measurements of saturated defect density in hydrogenated amorphous silicon (a-Si:H) using continuous and pulsed light illumination. Difference between pulsed and continuous wave light-induced saturation values of defect density; Creation of defects by light illumination; Details...

  • Effect of hydrogen on adsorbed precursor diffusion kinetics during hydrogenated amorphous silicon deposition. Bray, K. R.; Gupta, A.; Parsons, G. N. // Applied Physics Letters;4/1/2002, Vol. 80 Issue 13, p2356 

    Fractal analysis of the surface topography is used to study the effects of hydrogen dilution on the surface transport kinetics during the plasma deposition of hydrogenated amorphous silicon. Images obtained from atomic force microscopy are examined using dimensional fractal analysis, and surface...

  • Diffusion of hydrogen in post-plasma-hydrogenated amorphous silicon film. Nakamura, Minoru; Misawa, Yutaka // Journal of Applied Physics;8/1/1990, Vol. 68 Issue 3, p1005 

    Presents a study which explained the diffusion mechanism of hydrogen in post-plasma-hydrogenation of amorphous silicon film prepared by chemical vapor deposition. Materials and methods used; Result of secondary ion mass spectra of deuterium (D) for samples; Measurement of changes in the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics