TITLE

Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers

AUTHOR(S)
Mickevičius, J.; Aleksiejünas, R.; Shur, M. S.; Sakalauskas, S.; Tamulaitis, G.; Fareed, Q.; Gaska, R.
PUB. DATE
January 2005
SOURCE
Applied Physics Letters;1/24/2005, Vol. 86 Issue 4, p041910
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaN epilayers grown on sapphire and SiC substrates and exhibiting yellow and blue luminescence were studied using photoluminescence spectroscopy, light-induced grating, and Kelvin probe techniques. For epilayers on sapphire substrates, we observed practically no yellow luminescence (YL) and lifetimes exceeding 100 ps in samples with the Fermi level close (∼0.5 eV) to conduction band, while samples with Fermi level close to the midgap exhibited YL. A general trend is a decrease in the intensity of yellow and blue emission bands compared to the intensity of the band-to-band recombination in the samples with longer carrier lifetimes.
ACCESSION #
15925535

 

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