Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers

Mickevičius, J.; Aleksiejünas, R.; Shur, M. S.; Sakalauskas, S.; Tamulaitis, G.; Fareed, Q.; Gaska, R.
January 2005
Applied Physics Letters;1/24/2005, Vol. 86 Issue 4, p041910
Academic Journal
GaN epilayers grown on sapphire and SiC substrates and exhibiting yellow and blue luminescence were studied using photoluminescence spectroscopy, light-induced grating, and Kelvin probe techniques. For epilayers on sapphire substrates, we observed practically no yellow luminescence (YL) and lifetimes exceeding 100 ps in samples with the Fermi level close (∼0.5 eV) to conduction band, while samples with Fermi level close to the midgap exhibited YL. A general trend is a decrease in the intensity of yellow and blue emission bands compared to the intensity of the band-to-band recombination in the samples with longer carrier lifetimes.


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