Characteristics of Schottky contacts to ZnO:N layers grown by molecular-beam epitaxy

Oh, D. C.; Kim, J. J.; Makino, H.; Hanada, T.; Cho, M. W.; Yao, T.; Ko, H. J.
January 2005
Applied Physics Letters;1/24/2005, Vol. 86 Issue 4, p042110
Academic Journal
We have investigated the characteristics of Au Schottky contacts to ZnO:N layers grown on (0001) GaN/Al2O3 substrates by plasma-assisted molecular-beam epitaxy. It is found that the Schottky characteristics are dependent on the growth temperature and polar direction of ZnO:N layers. The Schottky barrier height for the Au contact to a ZnO:N layer (300 °C, Zn-polar) is estimated to be 0.66 and 0.69 eV by current–voltage measurements and capacitance–voltage measurements, respectively. It is found that the Schottky barrier height is proportional to the resistivity and incorporated N concentration of ZnO:N layers. Consequently, we believe that the low growth temperature and Zn-polar direction are favored for N incorporation in the growth of ZnO:N layers, which contributes to the increased resistivity in ZnO:N layers and results in good Schottky characteristics.


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