Evolution of the defect structure in helium implanted SiGe/Si heterostructures investigated by in situ annealing in a transmission electron microscope

Hueging, N.; Luysberg, M.; Urban, K.; Buca, D.; Mantl, S.
January 2005
Applied Physics Letters;1/24/2005, Vol. 86 Issue 4, p042112
Academic Journal
The evolution of the He-implantation induced defect structure in SiGe/Si heterostructures is observed during in situ annealing at 650 and 800 °C within a transmission electron microscope. The He implantation and annealing results in the formation of He precipitates below the SiGe/Si interface, which at first show a platelike shape and subsequently decay into spherical bubbles. The coarsening mechanism of the He bubbles is revealed as coalescence via movement of entire bubbles. The nucleation of dislocation loops at overpressurized He platelets and their propagation into the heterostructure could be observed as well. We found distinctly different velocities of the dislocations which we attribute to glide and climb processes. The in situ experiments clearly show that the He platelets act as internal dislocation sources and play a key role in the relaxation of SiGe layers.


Related Articles

  • Relaxation of SiGe thin films grown on Si/SiO2 substrates. LeGoues, F. K.; Powell, A.; Iyer, S. S. // Journal of Applied Physics;6/1/1994, Vol. 75 Issue 11, p7240 

    Presents a study which examined the relaxation in silicon/silicon germanide bilayers grown on top of SIMOX wafers as a function of temperature. Microstructure of the sample after annealing; Factors which contribute to the formation of the network of edge dislocation.

  • Defect Characterization in He Implanted Si. Denadai, Eduardo Perez; Rusakova, Irene; Carter, Jesse; Martin, Michael; Aitkaliyeva, Assel; Shao, Lin // AIP Conference Proceedings;3/15/2009, Vol. 1099 Issue 1, p1006 

    Conventional and high resolution transmission electron microscopes are used to characterize helium ion-implanted Si. 140 keV He ions were implanted into (100) Si to a fluence of 1×1017/cm2. After annealing at 873 K for 1 h, various linear and planar defects are formed. No He bubbles are...

  • Luminescence from Si/Si[sub 1-x]Ge[sub x] heterostructures and superlattices. Northrop, G.A.; Wolford, D.J. // Applied Physics Letters;2/17/1992, Vol. 60 Issue 7, p865 

    Examines luminescence originating from within silicon/silicon germanide multiple heterostructures. Manifestation of an induced-low temperature photoluminescence; Production of alloy-broadened spectra; Discussion on the epilayer-induced intrinsic radiative recombination.

  • New approach to the growth of low dislocation relaxed SiGe material. Powell, A.R.; Iyer, S.S. // Applied Physics Letters;4/4/1994, Vol. 64 Issue 14, p1856 

    Examines the production of very slow dislocation, relaxed silicon germanide (SiGe) heterostructures. Formation of SiGe layer on silicon (Si) substrate; Equalization of the strain between Si and SiGe layer; Benefits of S-on-insulator substrate for parasitics.

  • Cross-sectional transmission electron microscope study of residual defects in BF+2 implanted (111) Si. Nieh, C. W.; Chen, L. J. // Journal of Applied Physics;12/1/1987, Vol. 62 Issue 11, p4421 

    Provides information on a study which discussed cross-sectional transmission electron microscope study of residual defects in BF[sup+sub2] implanted (111) silicon. Origin of the residual defects; Factors prepared for transmission electron microscope examinations; Motive for using the weak-beam...

  • Gallium oxide and gadolinium gallium oxide insulators on Si δ-doped GaAs/AlGaAs heterostructures. Paterson, G. W.; Longo, P.; Wilson, J. A.; Craven, A. J.; Long, A. R.; Thayne, I. G.; Passlack, M.; Droopad, R. // Journal of Applied Physics;Nov2008, Vol. 104 Issue 10, p103719 

    Test devices have been fabricated on two specially grown GaAs/AlGaAs wafers with 10 nm thick gate dielectrics composed of either Ga2O3 or a stack of Ga2O3 and Gd0.25Ga0.15O0.6. The wafers have two GaAs transport channels either side of an AlGaAs barrier containing a Si δ-doping layer....

  • Growth mechanism of cavities in MeV helium implanted silicon. Grisolia, J.; Claverie, A.; Assayag, G. Ben; Godey, S.; Ntsoenzok, E.; Labhom, F.; Van Veen, A. // Journal of Applied Physics;6/1/2002, Vol. 91 Issue 11, p9027 

    A study of silicon implanted with 1.55 MeV helium 3 and thermally annealed to generate a subsurface cavity region was performed using neutron depth profiling and transmission electron microscopy (TEM). Results show that about 30% of the initial implanted helium is still present in cavities even...

  • Cross-section transmission electron microscope observations of diamond-turned single-crystal Si.... Shibata, Takayuki; Ono, Atsushi // Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2553 

    Describes the cross-section transmission electron microscope observations of diamond-turned single-crystal silicon (Si) surfaces. Conversion of Si surface layers into amorphous structure by diamond turning; Formation of microcracks through excessive dislocations accumulation; Realization of...

  • Cross-sectional transmission electron microscope study of intrinsic solid-phase epitaxial growth in self-ion-implanted (001) Si. Nieh, C. W.; Chen, L. J. // Journal of Applied Physics;1/15/1988, Vol. 63 Issue 2, p575 

    Studies the intrinsic solid-phase epitaxial growth in self-ion-implanted silicon using a cross-sectional transmission electron microscope. Importance of the study on the kinetics of solid-phase epitaxial growth of implantation-amorphous layers in silicon; Methodology of the study; Discussion on...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics