Piezoelectric ultrathin BaTiO3 films

Drezner, Y.; Nitzani, M.; Berger, S.
January 2005
Applied Physics Letters;1/24/2005, Vol. 86 Issue 4, p042906
Academic Journal
Ultrathin (about 3 nm thick) BaTiO3 films were deposited by rf sputtering on a Si(100) substrate. LaNiO3 thin films were used as bottom and top conductive electrodes. The BaTiO3 films show piezoelectric behavior characterized by a coefficient d31=-1.8 pC/N. The BaTiO3 films have an extremely high resistance to electrical breakdown up to a field of about 200 MV/cm.


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