Highly sensitive time-of-flight secondary-ion mass spectroscopy for contaminant analysis of semiconductor surface using cluster impact ionization

Hirata, K.; Saitoh, Y.; Chiba, A.; Narumi, K.; Kobayashi, Y.; Ohara, Y.
January 2005
Applied Physics Letters;1/24/2005, Vol. 86 Issue 4, p044105
Academic Journal
To compare emission yields of secondary ions from contaminated silicon wafers between cluster and monoatomic ion impacts, pulsed C1+ and C8+ beams are applied to time-of-flight secondary-ion mass spectrometry. C8+ impact of 0.5 MeV/atom provides higher secondary-ion emission yields per incident atom than C1+ impact of 0.5 MeV/atom for organic and metallic contaminants. Higher peak intensities are also observed for a C8+ ion beam with a reduced energy. The enhanced emission yields of secondary ions originating from the contaminants show that mass spectrometry with cluster impact ionization is a powerful analytical tool for highly sensitive detection of the surface contaminants on the silicon wafers.


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