InGaN nano-ring structures for high-efficiency light emitting diodes

Choi, H. W.; Jeon, C. W.; Liu, C.; Watson, I. M.; Dawson, M. D.; Edwards, P. R.; Martin, R. W.; Tripathy, S.; Chua, S. J.
January 2005
Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p021101
Academic Journal
A technique based on the Fresnel diffraction effect for the fabrication of nano-scale site-controlled ring structures in InGaN/GaN multi-quantum well structures has been demonstrated. The ring structures have an internal diameter of 500 nm and a wall width of 300 nm. A 1 cm-1 Raman shift has been measured, signifying substantial strain relaxation from the fabricated structure. The 9 nm blueshift observed in the cathodoluminescence spectra can be attributed to band filling and/or screening of the piezoelectric field. A light emitting diode based on this geometry has been demonstrated.


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