Electrical characteristics of Pt Schottky contacts on sulfide-treated n-type ZnO

Kim, Sang-Ho; Kim, Han-Ki; Seong, Tae-Yeon
January 2005
Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p022101
Academic Journal
We have investigated the effect of sulfide treatment on the electrical characteristics of Pt contacts on (000-1) n-type ZnO (∼5×1015cm-3) single crystals. The Pt contact on conventionally cleaned ZnO surface shows an ohmic behavior. However, the contact produces a Schottky behavior, when the ZnO surface is etched in a boiling (NH4)2Sx solution. Measurements show that the Schottky barrier height, ideality factor, and leakage current at -5 V of the Pt contact on the sulfide-treated ZnO are 0.79 eV, 1.51, and 3.75×10-10 A, respectively. Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS) examinations indicate the formation of ZnS phase at the Pt/ZnO interface. Based on the capacitance–voltage, AES, and XPS results, a possible mechanism for the formation of good Schottky contacts is given.


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