Effect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO2 layers

Lopes, J. M. J.; Zawislak, F. C.; Fichtner, P. F. P.; Lovey, F. C.; Condó, A. M.
January 2005
Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p023101
Academic Journal
Sn nanoclusters are synthesized in 180 nm SiO2 layers after ion implantation and heat treatment. Annealings in N2 ambient at high temperatures (T>=700 °C) lead to the formation of Sn nanoclusters of different sizes in metallic and in oxidized phases. High-resolution transmission electron microscopy (TEM) analyses revealed that the formed larger nanoparticles are composed by a Sn metallic core and a SnOx shell. The corresponding blue-violet photoluminescence (PL) presents low intensity. However, for heat treatments in vacuum, the PL intensity is increased by a factor of 5 and the TEM data show a homogeneous size distribution of Sn nanoclusters. The low intensity of PL for the N2 annealed samples is associated with Sn oxidation.


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