TITLE

Effect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO2 layers

AUTHOR(S)
Lopes, J. M. J.; Zawislak, F. C.; Fichtner, P. F. P.; Lovey, F. C.; Condó, A. M.
PUB. DATE
January 2005
SOURCE
Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p023101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Sn nanoclusters are synthesized in 180 nm SiO2 layers after ion implantation and heat treatment. Annealings in N2 ambient at high temperatures (T>=700 °C) lead to the formation of Sn nanoclusters of different sizes in metallic and in oxidized phases. High-resolution transmission electron microscopy (TEM) analyses revealed that the formed larger nanoparticles are composed by a Sn metallic core and a SnOx shell. The corresponding blue-violet photoluminescence (PL) presents low intensity. However, for heat treatments in vacuum, the PL intensity is increased by a factor of 5 and the TEM data show a homogeneous size distribution of Sn nanoclusters. The low intensity of PL for the N2 annealed samples is associated with Sn oxidation.
ACCESSION #
15644166

 

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