Finite-element study of strain distribution in transistor with silicon–germanium source and drain regions

Yeo, Yee-Chia; Sun, Jisong
January 2005
Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p023103
Academic Journal
The strain field in the silicon channel of a metal–oxide–semiconductor transistor with silicon–germanium (Si1-yGey) source and drain regions was evaluated using a finite-element method. The physical origin of the vertical and lateral strain components in the transistor channel region was explained. The magnitude and distribution of the strain components, and their dependence on device design parameters such as the spacing L between the Si1-yGey stressors and the Ge mole fraction y in the stressors were investigated. Reducing the interstressor spacing L or increasing the Ge mole fraction y in the stressors increases the magnitude of the vertical tensile strain and the lateral compressive strain in the portion of the channel region where the inversion charge resides. This is beneficial for improving the hole mobility in p-channel metal–oxide–semiconductor transistors.


Related Articles

  • Nonequilibrium Phase Transitions and S-Shaped Current—Voltage Characteristics in a Model Semiconductor—Metal System. Melkikh, A. V.; Povzner, A. A.; Andreeva, A. G.; Sachkov, I. N. // Technical Physics Letters;Mar2001, Vol. 27 Issue 3, p226 

    A model of nonequilibrium phase transition in a semiconductor-metal system was considered using a finite-element method. It is shown that, beginning with a certain fraction of the metal component in the heterophase system, the S-shaped current-voltage characteristics exhibit a change: the system...

  • Finite element simulation for ultraviolet excimer laser processing of patterned Si/SiGe/Si(100) heterostructures. Conde, J. C.; Martín, E.; Chiussi, S.; Gontad, F.; Serra, C.; González, P. // Applied Physics Letters;7/5/2010, Vol. 97 Issue 1, p014102 

    Ultraviolet (UV) Excimer laser assisted processing is an alternative strategy for producing patterned silicon germanium heterostructures. We numerically analyzed the effects caused by pulsed 193 Excimer laser radiation impinging on patterned amorphous hydrogenated silicon (a-Si:H) and germanium...

  • Zener tunneling in plasmonic metal gap waveguide superlattices. Lin, Weihua; Gu, Yang; Wang, Guo Ping // Applied Physics Letters;9/29/2008, Vol. 93 Issue 13, p133118 

    We report the zener tunneling (ZT) in plasmonic metal gap waveguide superlattices. Two types of plasmonic cavities are introduced into the structures for producing two plasmonic minibands separated by a narrow minigap, and a geometric thickness gradient is employed for creating two plasmonic...

  • Electromagnetic coupling of light into a silicon solar cell by nanodisk plasmons. Hägglund, Carl; Zäch, Michael; Petersson, Göran; Kasemo, Bengt // Applied Physics Letters;2/4/2008, Vol. 92 Issue 5, p053110 

    Photocurrents of silicon pn junctions patterned with arrays of elliptical Au nanodisks were experimentally and theoretically investigated near the particle plasmon resonance wavelengths, for varying light polarizations and angles of incidence. At plasmon resonance wavelengths, overall...

  • Improvement of pulse diagnostic apparatus with array sensor of magnetic tunneling junctions. Kim, S. W.; Hwang, D. G.; Choi, Y. K.; Lee, H. S.; Park, D. H.; Lee, S. S.; Kim, G. W.; Lee, S. G.; Lee, S. J. // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08R908 

    To obtain the spatial feature of arterial pulse, a spatial pulse diagnostic apparatus was designed using a two-dimensional magnetoresistive sensor array. The magnetic-field distribution for the magnet array was simulated using the finite-element method. The field distribution of parallel magnet...

  • Finite element analysis of the diamond anvil cell: Achieving 4.6 Mbar. Moss, William C.; Hallquist, John O.; Reichlin, Robin; Goettel, Kenneth A.; Martin, Sue // Applied Physics Letters;5/12/1986, Vol. 48 Issue 19, p1258 

    We have performed a comprehensive finite element analysis of the diamond anvil cell. Our analysis shows how beveled diamonds and material properties of the gasket affect diamond anvil cell performance. Using the results of the analysis, we have achieved 4.6 Mbar experimentally, which is the...

  • Triple-junction contribution to diffusion in nanocrystalline Si. Portavoce, A.; Chow, L.; Bernardini, J. // Applied Physics Letters;5/24/2010, Vol. 96 Issue 21, p214102 

    The influence of triple-junctions on experimental Ge diffusion profiles (850–1000 °C) in nanocrystalline Si is investigated using three-dimensional finite element simulations. We found that triple-junction diffusion is not negligible in nanocrystalline Si made of 40 nm wide grains. Ge...

  • Electronic structures of alloy quantum dots with nonuniform composition. Ye, H.; Lu, P.; Yu, Z.; Wang, D.; Liu, Y. // European Physical Journal B -- Condensed Matter;Jun2011, Vol. 81 Issue 4, p425 

    In this study, the significant effect of the nonuniform composition in alloy quantum dots (QDs) on electronic structure is analyzed in depth. The equilibrium composition profiles in experimentally observed dome and barn shaped GeSi/Si QDs are determined by combining the finite element method and...

  • About the internal pressure in cavities derived from implantation-induced blistering in semi-conductors. Parry, G.; Coupeau, C.; Dion, E.; David, M.-L.; Colin, J.; Grilhé, J. // Journal of Applied Physics;Dec2011, Vol. 110 Issue 11, p114903 

    Silicon and germanium wafers were implanted with hydrogen at high fluence and then submitted to thermal treatment at low temperature. By means of atomic force microscopy observations and finite elements simulations, the internal pressure under the resulting blisters appearing onto the surface...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics