Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window

Choi, Woon Kyung; Kim, Doo Gun; Choi, Young Wan; Lee, Seok; Woo, Deok Ha; Kim, Sun Ho
January 2005
Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p021108
Academic Journal
This study demonstrates the lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36 V and 10 μA, respectively. The lasing threshold current is 131 mA at 25 °C. The output peak wavelength is 1570 nm at a bias current of 1.22 Ith and there is no input signal. The vertically injected depleted optical thyristor shows very good isolation between input and output signals.


Related Articles

  • High-frequency modulation and bandwidth limitations of GaInNAs double-quantum-well lasers. Y. Q. Wei; Gustavsson, J. S.; Haglund, Å.; Modh, P.; Sadeghi, M.; S. M. Wang; Larsson, A. // Applied Physics Letters;1/30/2006, Vol. 88 Issue 5, p051103 

    We have studied the modulation bandwidth of high-speed GaInNAs double-quantum-well lasers emitting at 1.28–1.30 μm. A 400 μm long ridge waveguide laser exhibits a small signal modulation bandwidth of 14 GHz. The intrinsic damping limited modulation bandwidth is as high as 25 GHz...

  • Dual-wavelength emission from a twin-stripe single quantum well laser. Tokuda, Yasunori; Abe, Yuji; Matsui, Teruhito; Tsukada, Noriaki; Nakayama, Takashi // Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1664 

    We demonstrate a dual-wavelength laser constructed from a single quantum well structure. The device includes twin-stripe waveguides which differ in width. The two constituent emitters in the device of appropriate cavity lengths operate at widely different wavelengths, which are based on the...

  • Longitudinal-mode switching in a two-segment multiquantum-well distributed-feedback laser. Li, G. P.; Makino, T. // Journal of Applied Physics;5/1/1995, Vol. 77 Issue 9, p4810 

    Focuses on a study which observed two types of wavelength switching in two-segment multiquantum-well (MQW) distributed-feedback lasers (DFB). Application potential of wavelength switching between two bistable modes in two-segment distributed-feedback lasers; Structure of the two-segment ridge...

  • Analysis and optimization of graded-index separate-confinement heterostructure waveguides for quantum well lasers. Zou, W. X.; Chuang, Z. M.; Law, K-K.; Dagli, N.; Coldren, L. A.; Merz, J. L. // Journal of Applied Physics;3/1/1991, Vol. 69 Issue 5, p2857 

    Analyzes the waveguide structures for quantum well lasers. Details on the graded-index profile in the waveguide lasers; Use of the matrix approach in calculations; Description of the waveguide structures.

  • 14.3 W quasicontinuous wave front-facet power from broad-waveguide Al-free 970 nm diode lasers. Al-Muhanna, A.; Mawst, L.J. // Applied Physics Letters;9/1/1997, Vol. 71 Issue 9, p1142 

    Demonstrates the quasicontinuous wave output power from a wide-stripe broad-waveguide separate confinement heterostructure quantum-well lasers. Evidence of internal losses and external differential quantum efficiency; Indication of spectral broadening in the long-cavity, large-contact-area;...

  • Low threshold room-temperature continuous-wave operation of 2.24–3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers. Lin, C.; Grau, M.; Dier, O.; Amann, M.-C. // Applied Physics Letters;6/21/2004, Vol. 84 Issue 25, p5088 

    3.04 μm emission has been achieved in GaInAsSb/AlGaAsSb double-quantum-well ridge waveguide diode lasers in continuous-wave mode up to 20 °C. A threshold current density of 343 A/cm2 was recorded from a laser with 2 mm cavity length and 30 μm ridge width in pulsed-mode operation. A...

  • The Properties of InGaAsP/InP Heterolasers with Step-Divergent Waveguides. Golikova, E. G.; Kureshov, V. A.; Leshko, A. Yu.; Livshits, D. A.; Lyutetskiı, A. V.; Nikolaev, D. N.; Pikhtin, N. A.; Ryaboshtan, Yu. A.; Slipchenko, S. O.; Tarasov, I. S.; Fetisova, N. V. // Technical Physics Letters;Oct2000, Vol. 26 Issue 10, p913 

    InGaAsP/InP laser heterostructures with step-divergent waveguides and two stressed quantum wells were obtained by metalorganic VPE. The lasers emitting at 1.55 µm provide for an intrinsic quantum yield of η[sub i] = 85 %. An optical power of 5.2 W in the continuous operation mode was...

  • 980 nm ridge waveguide laser reliability at 100 mW. Heath, L.S.; Meehan, K.; Chin, A.K.; Gavrilovic, P.; Zarrabi, J.H.; Wober, M.; Bisberg, J.E. // Applied Physics Letters;4/19/1993, Vol. 62 Issue 16, p1863 

    Demonstrates the operation of strained layer indium gallium arsenide single quantum well (QW) ridge waveguide lasers. Maximum optical power of the QW lasers; Immunity of the lasers to sudden failure; Fabrication of ridge waveguides by reactive ion etching.

  • Effects of strain in multiple quantum well distributed feedback lasers. Tanbun-Ek, T.; Logan, R. A.; Chu, S. N. G.; Sergent, A. M.; Wecht, K. W. // Applied Physics Letters;11/19/1990, Vol. 57 Issue 21, p2184 

    A survey of graded-index separate confinement multiple quantum well distributed feedback lasers comparing the effects of strain in the quantum well upon threshold, output power, and linewidth is reported. Lasers with either compressive or tensile strained quantum wells and a long cavity length...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics