Structure of the carrot defect in 4H-SiC epitaxial layers

Benamara, M.; Zhang, X.; Skowronski, M.; Ruterana, P.; Nouet, G.; Sumakeris, J. J.; Paisley, M. J.; O’Loughlin, M. J.
January 2005
Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p021905
Academic Journal
Transmission electron microscopy and KOH etching were used to determine the structure of the carrot defect in 4H-SiC epilayers. The defect consists of two intersecting planar faults on prismatic [1&1macr;00] and basal [0001] planes. Both faults are connected by a stair-rod dislocation with Burgers vector 1/n [10&1macr;0] with n >3 at the crossover. A Frank-partial dislocation with b = 1 /12[4&4macr;03] terminates the basal fault.


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