Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application

Biswas, Nivedita; Gurganus, Jason; Misra, Veena; Yang, Yan; Stemmer, Susanne
January 2005
Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p022105
Academic Journal
Characteristics of NiSi and MoSi via full consumption of undoped silicon layers have been studied. Interaction of nickel (Ni) and molybdenum (Mo) silicides with SiO2 was evaluated in terms of work function and thermal stability. For nickel silicide, the work function values were low for samples annealed at 400 °C even after full consumption of silicon. The work function increased with the anneal temperature and stabilized at 600 °C to close to midgap values. Dielectric interaction as a result of silicide formation was studied using current–voltage characteristics. Low leakage currents in these stacks indicated minimum dielectric damage due to silicided gates. Silicidation of Mo was found to be incomplete as the capacitance–voltage curves were marked with larger EOT values and negative shifts in the flatband voltages even at 700 °C. Auger depth profiling, high resolution transmission electron microscopy (HRTEM) and x-ray diffraction (XRD) were used for material analysis of the silicided gate stacks.


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