Ultrahigh temperature vibration sensors using aluminum nitride thin films and W/Ru multilayer electrodes

Akiyama, Morito; Kamohara, Toshihiro; Nishikubo, Keiko; Ueno, Naohiro; Nagai, Hideaki; Okutani, Takeshi
January 2005
Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p022106
Academic Journal
Ultrahigh temperature vibration sensors have been fabricated from highly c-axis-oriented aluminum nitride (AlN) thin films and tungsten/ruthenium (W/Ru) multilayer bottom electrodes. These films and electrodes were prepared by radio-frequency magnetron sputtering on zirconium oxide (ZrO2) substrates, such as AlN/W/Ru/ZrO2. The vibration sensors resisted the heat treatment of 1450 °C for 1 h in argon, and after that, peeling and cracks were not observed in the sensor surface. The “tough” behavior of the vibration sensors in the high temperature is probably attributed to the chemical composition change of the W/Ru multilayer bottom electrodes to Ru60W40 and Ru15W85 solid solutions that prevent chemical reactions and relax thermal stress.


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