Observation of trapping defects in 4H–silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination

Meyer, David J.; Lenahan, Patrick M.; Lelis, Aivars J.
January 2005
Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p023503
Academic Journal
We utilize a highly sensitive electron spin resonance technique called spin-dependent recombination to observe deep level dangling bond centers at and very near the SiC/SiO2 interface in fully processed n-channel 4H–SiC lateral metal-oxide-semiconductor field-effect transistors. The axially symmetric g tensor of the largest signal strongly suggests that the responsible defect is a dangling bond center with the dangling bond orbital pointing along the crystalline c axis.


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