Direct evidence of nanocluster-induced luminescence in InGaN epifilms

Chang, H. J.; Chen, C. H.; Chen, Y. F.; Lin, T. Y.; Chen, L. C.; Chen, K. H.; Lan, Z. H.
January 2005
Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p021911
Academic Journal
x-ray diffraction, scanning electron microscopy, energy dispersive x-ray spectrometry, and cathodoluminescence measurements have been employed to study the correlation between optical and structural properties in InGaN epitaxial films. In-rich quantum dots were found to be dispersed throughout the film. By the combination of these measurements, we clearly identify that brighter luminescence arises from In-rich regions while dimmer luminescence corresponds to the Ga-rich matrix regions.


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