TITLE

Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques

AUTHOR(S)
Chichibu, S. F.; Uedono, A.; Onuma, T.; Sota, T.; Haskell, B. A.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.
PUB. DATE
January 2005
SOURCE
Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p021914
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Room-temperature nonradiative lifetime (Ï„nr) of the near-band-edge excitonic photoluminescence (PL) peak in [0001] polar, (11&2macr;0), (1&1macr;00), and (001) nonpolar GaN was shown to increase with the decrease in density or size of Ga vacancies (VGa) and with the decrease in gross density of point defects including complexes, leading to the increase in the FL intensity. As the edge threading dislocation density decreased, density or size of VGa tended to decrease and Ï„nr tended to increase. However, there existed remarkable exceptions. The results indicate that nonradiative recombination process is governed not by single joint defects, hut by certain defects introduced with the incorporation of VGa, such as VGa-defect complexes.
ACCESSION #
15644119

 

Related Articles

  • Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN. Armitage, R.; Hong, William; Yang, Qing; Feick, H.; Gebauer, J.; Weber, E. R.; Hautakangas, S.; Saarinen, K. // Applied Physics Letters;5/19/2003, Vol. 82 Issue 20, p3457 

    Carbon-doped GaN layers grown by molecular-beam epitaxy are studied with photoluminescence and positron annihilation spectroscopy. Semi-insulating layers doped with > 10[sup 18] cm[sup -3] carbon show a strong luminescence band centered at ∼2.2 eV (yellow luminescence). The absolute...

  • Theoretical study of electronic and positronic properties in Ga ... xln ... 1-xP ... ySb ... zAs ... 1-y-z lattice matched to GaSb. Bouarissa, N. // European Physical Journal B -- Condensed Matter;Apr2003, Vol. 32 Issue 4, p421 

    : The electronic and positronic properties of the pentanary semiconductor alloys GaxIn1-xPySbzAs1-y-z lattice matched to GaSb have been studied. The electron wave function is calculated semiempirically using the pseudopotential band model under the virtual crystal approximation. The positron...

  • Decoration of buried surfaces in Si detected by positron annihilation spectroscopy. Brusa, R. S.; Macchi, C.; Mariazzi, S.; Karwasz, G. P.; Egger, W.; Sperr, P.; Kögel, G. // Applied Physics Letters;1/2/2006, Vol. 88 Issue 1, p011920 

    The terminations of buried surfaces of two different cavity types (nano- and microcavities) produced in the same He+–H+ co-implanted p-type Si (100) sample annealed at 900 °C, are studied and characterized by positron annihilation spectroscopy. The characterization was carried out by...

  • Study of various types of diamonds by measurements of double crystal x-ray diffraction and positron annihilation. Fujii, S.; Nishibayashi, Y.; Shikata, S.; Uedono, A.; Tanigawa, S. // Journal of Applied Physics;8/1/1995, Vol. 78 Issue 3, p1510 

    Presents a study that examined the annihilation characteristics of positrons in various types of diamonds. Measurements of two-dimensional angular correlation of positron annihilation; Amount of defects in type Ib synthesized diamond; Results of the double x-ray measurements.

  • Preface. Zgardzińska, Bożena // Nukleonika;Dec2015, Vol. 60 Issue 4, p701 

    The article introduces various papers on positron annihilation published within the issue.

  • Defects and acceptor centers in ZnO introduced by C-implantation. Jiang, M.; Xue, X.; Chen, Z.; Liu, Y.; Liang, H.; Zhang, H.; Kawasuso, A. // Journal of Materials Science;Mar2014, Vol. 49 Issue 5, p1994 

    ZnO single crystals were implanted with 280 keV C to a dose of 6 × 10 cm. Positron annihilation measurements reveal a large number of vacancy clusters in the implanted sample. They further agglomerate into larger size or even microvoids after annealing up to 700 °C, and are fully removed...

  • Characterization of the interface region during the agglomeration of silicon nanocrystals in silicon dioxide. Pi, X. D.; Coleman, P. G.; Harding, R.; Davies, G.; Gwilliam, R. M. // Journal of Applied Physics;6/15/2004, Vol. 95 Issue 12, p8155 

    Si nanocrystals embedded in thermally grown SiO2 have been annealed at temperatures between 400 and 900 °C in a variety of atmospheres. Positron annihilation spectroscopy has been employed to study changes in the interface regions between nanocrystalline Si (nc-Si) and SiO2 with the support...

  • Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films. Xu, F. J.; Shen, B.; Lu, L.; Miao, Z. L.; Song, J.; Yang, Z. J.; Zhang, G. Y.; Hao, X. P.; Wang, B. Y.; Shen, X. Q.; Okumura, H. // Journal of Applied Physics;Jan2010, Vol. 107 Issue 2, p023528 

    The yellow luminescence (YL) in as-grown high-resistance (HR) and unintentional-doped (UID) GaN films grown by metal organic chemical vapor deposition has been investigated by means of photoluminescence and monoenergetic positron annihilation spectroscopy. It is found there is stronger YL in...

  • Vacancy-type defects introduced by plastic deformation of GaN studied using monoenergetic positron beams. Uedono, Akira; Yonenaga, Ichiro; Watanabe, Tomohito; Kimura, Shogo; Oshima, Nagayasu; Suzuki, Ryoichi; Ishibashi, Shoji; Ohno, Yutaka // Journal of Applied Physics;Aug2013, Vol. 114 Issue 8, p084506 

    Vacancy-type defects in plastically deformed GaN were studied using monoenergetic positron beams. Dislocations with a Burgers vector of (1/3)[1[formula]10] were introduced by applying compressive stress at 950 °C. Measurements of Doppler broadening spectra of the annihilation radiation and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics