Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques

Chichibu, S. F.; Uedono, A.; Onuma, T.; Sota, T.; Haskell, B. A.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.
January 2005
Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p021914
Academic Journal
Room-temperature nonradiative lifetime (Ï„nr) of the near-band-edge excitonic photoluminescence (PL) peak in [0001] polar, (11&2macr;0), (1&1macr;00), and (001) nonpolar GaN was shown to increase with the decrease in density or size of Ga vacancies (VGa) and with the decrease in gross density of point defects including complexes, leading to the increase in the FL intensity. As the edge threading dislocation density decreased, density or size of VGa tended to decrease and Ï„nr tended to increase. However, there existed remarkable exceptions. The results indicate that nonradiative recombination process is governed not by single joint defects, hut by certain defects introduced with the incorporation of VGa, such as VGa-defect complexes.


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