Hot-electron transport in 4H–SiC

Ardaravicčius, L.; Matulionis, A.; Kiprijanovic, O.; Liberis, J.; Cha, H.-Y.; Eastman, L. F.; Spencer, M. G.
January 2005
Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p022107
Academic Journal
Nanosecond-pulsed technique is used to study hot-electron transport in donor-doped 4H–SiC (n=2×1017 cm-3) biased parallel to the basal plane. The measurements of current with 1 ns voltage pulses are carried out at average electric fields up to 570 kV/cm. A region with a negative differential conductance is observed for the range of fields exceeding 280 kV/cm, followed by a sharp increase in the current at fields over 345 kV/cm. The dependence of drift velocity on electric field is deduced for the field range below the onset of the negative differential conductance to appear: the value of the saturation velocity is estimated as 1.4×107 cm/s at room temperature.


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