TITLE

Spatially resolved diagnosis of stress-induced breakdown in oxide dots by in situ conducting atomic force microscopy

AUTHOR(S)
Xie, X. N.; Chung, H. J.; Sow, C. H.; Wee, A. T. S.
PUB. DATE
January 2005
SOURCE
Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p023112
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report an investigation on the stress-induced breakdown (BD) in ultrathin oxide grown by atomic force microscopy (AFM oxide). A conducting atomic force microscopy (c-AFM) technique was employed to stress the AFM oxide and examine its BD behavior. It was found that thermal annealing has a strong impact on the dielectric strength of AFM oxide. The stress-induced trap generation probability, Pt, could be reduced by ∼50% after annealing the oxide at elevated temperatures. Such a thermal effect is related to the local structural relaxation and trap state minimization in AFM oxide upon annealing. The spatially resolved current images allow a microscopic diagnosis of the distribution of BD sites: isolated single BD spots and laterally propagated BD areas were observed in an oxide dot. Soft and hard breakdown sites were also distinguished on the current images.
ACCESSION #
15644107

 

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