Electronic insulator-conductor conversion in hydride ion-doped 12CaO·7Al2O3 by electron-beam irradiation

Hayashi, Katsuro; Toda, Yoshitake; Kamiya, Toshio; Hirano, Masahiro; Yamanaka, Minako; Tanaka, Isao; Yamamoto, Takahisa; Hosono, Hideo
January 2005
Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p022109
Academic Journal
We report formation of persistent carrier electrons in hydride ion (H-)-incorporated 12CaO·7Al2O3 (C12A7) by electron-beam irradiation. The electrical conductivity of H--doped C12A7 single crystals increases with the electron-beam irradiation dose, accompanied with a green coloration attributable to a carrier electron formation. A 25 keV electron beam with a dose of ∼500 μC cm-2 fully converts the conductivity in surface layers to the depth of ∼4 μm. Carrier electron formation is most likely due to electron-hole pairs generated in the electron excitation volume and subsequent energy transfer to the H- ions. The estimated carrier formation yield per an incident electron is ∼30. These findings may enable a fine patterning of the conductive area without photomasks and photoresists.


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