Interfacial reactions during GaN and AiN epitaxy on 4H– and 6H–SiC(0001)

Losurdo, Maria; Capezzuto, Pio; Bruno, Giovanni; Brown, April; Kim, Tong-Ho; Yi, Changhyun; Zakharov, D. N.; Liliental-Weber, Z.
January 2005
Applied Physics Letters;1/10/2005, Vol. 86 Issue 2, p021920
Academic Journal
Thin layers of AlN and GaN have been grown by plasma-assisted molecular beam epitaxy on Si-face 4H– and 6H–SiC(0001)Si substrates. The impact of the SiC surface preparation and oxide removal via a Ga deposition and desorption process on the chemistry and structure of the GaN/SiC and AlN/SiC interfaces, and on the GaN/SiC subsurface reactivity is characterized. We also investigate the impact of this process on growth mode evolution.


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