Influence of band alignment on recombination in pseudomorphic Si1-xGex/Si quantum wells

Sugawara, Y.; Kishimoto, Y.; Akai, Y.; Fukatsu, S.
January 2005
Applied Physics Letters;1/3/2005, Vol. 86 Issue 1, p011907
Academic Journal
Unique potential lineup of pseudomorphic Si1-xGex/Si quantum wells (QWs) allows negative charge buildup in the near-surface region. Significant local charge imbalance created thereby between electrons and holes diminishes the efficiency of the otherwise dominating, nonradiative Shockley-Read-Hall recombination in the QWs at a low level of photoexcitation, which is evidenced by anomalous evolution of photoluminescence intensity and internal quantum efficiency with increasing excitation density.


Related Articles

  • Formation and photoluminescent properties of embedded ZnO quantum dots in ZnO/ZnMgO multiple-quantum-well-structured nanorods. Chinkyo Kim; Won II Park; Gyu-Chul Yi; Miyoung Kim // Applied Physics Letters;9/11/2006, Vol. 89 Issue 11, p113106 

    ZnO/Zn0.8Mg0.2O multiple-quantum-well (MQW) nanorods with a different number of periods and well widths were grown by catalyst-free metal-organic vapor phase epitaxy. Their optical and structural characteristics were investigated using photoluminescence, transmission electron microscopy, and...

  • Singlet And Triplet Trion States In QW Structures. Andronikov, D.; Kochereshko, V.; Platonov, A.; Crooker, S. A.; Barrick, T.; Karczewski, G. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p973 

    Photoluminescence (PL) spectra of modulation-doped CdTe/CdMgTe quantum well structures containing two dimensional electron gases different electron concentrations have been studied in magnetic fields up to 45T. Recombination line of triplet trion state was found in the spectra. A model...

  • Optical Spectroscopy on Single Localized States in an InGaN/GaN Structure. Halm, S.; Bacher, G.; Schömig, H.; Forchel, A.; Off, J.; Scholz, F. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p927 

    By employing photoluminescence (PL) spectroscopy with subwavelength lateral resolution we succeeded in resolving individual localization centers in a thin InGaN/GaN quantum well. Spectrally narrow PL lines with a linewidth as small as 0.8meV could be observed and attributed to the recombination...

  • Competition of compressive strain with substrate misorientation in CuPt-type ordered GaInP/AlGaInP quantum wells. Liangqing Zhu; Jun Shao; Xiang Lü; Shaoling Guo; Junhao Chu // Journal of Applied Physics;Jan2011, Vol. 109 Issue 1, p013509 

    Temperature-dependent photoluminescence (PL) measurements are carried out on lattice-matched and compressively strained GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells (QWs) with CuPt-type long-range (LR) ordering. Experimental data show that compressive strain and substrate misorientation of the...

  • Photoluminescence of a tensilely strained silicon quantum well on a relaxed SiGe buffer layer. Boucaud, P.; El Kurdi, M.; Hartmann, J.M. // Applied Physics Letters;7/5/2004, Vol. 85 Issue 1, p46 

    We have investigated the photoluminescence of tensilely strained silicon layers grown on relaxed SiGe buffer layers. At low excitation densities, the photoluminescence is dominated by the radiative recombinations associated with the dislocations in the buffer layer and the band-edge luminescence...

  • Magnetotransport spectroscopy of mode coupling in electron wave guides. Apetrii, G.; Fischer, S. F.; Kunze, U.; Schuh, D.; Abstreiter, G. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p923 

    High-quality one-dimensional electron wave guides were fabricated by atomic-force microscope lithography from a AlGaAs/GaAs 30 nm wide quantum well with two occupied subband. In the case of strong coupling the quantized conductance at 4.2 K shows missing or ill-defined steps with otherwise...

  • Characterization of quantum wells by cross-sectional Kelvin probe force microscopy. Douhéret, O.; Anand, S.; Glatzel, Th.; Maknys, K.; Sadewasser, S. // Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5245 

    Cross-sectional Kelvin probe force microscopy (KPFM) in ultrahigh vacuum is used to characterize the electronic structure of InGaAs/InP quantum wells. The KPFM signal shows clear peaks at the position of the quantum wells and exhibits a systematic trend for different wells. It is demonstrated...

  • Increasing Laser Excitation Power Induces Large Blue Shift of the Photoluminescence Peak of Quantum Wells in Gallium Nitride. Jacobson, M. A.; Nelson, D. K.; Konstantinov, O. V.; Matveentsev, A. V. // Technical Physics Letters;Jul2005, Vol. 31 Issue 7, p573 

    It is experimentally demonstrated that, as the output power density of a nitrogen laser is increased from 10 to 1000kW/cm2 , a peak in the photoluminescence spectrum of quantum wells (QWs) in GaN shifts by approximately 150 meV. This behavior cannot be interpreted within the framework of the...

  • Electron-irradiation enhanced photoluminescence from GaInNAs/GaAs quantum wells subject to thermal annealing. Pavelescu, E.-M.; Gheorghiu, A.; Dumitrescu, M.; Tukiainen, A.; Jouhti, T.; Hakkarainen, T.; Kudrawiec, R.; Andrzejewski, J.; Misiewicz, J.; Tkachenko, N.; Dhaka, V. D. S.; Lemmetyinen, H.; Pessa, M. // Applied Physics Letters;12/20/2004, Vol. 85 Issue 25, p6158 

    Electron irradiation of a 1.3-μm-GaInNAs/GaAs multi-quantum-well heterostructure, grown by molecular beam epitaxy and subsequently rapid-thermal annealed, is found to induce much stronger photoluminescence than what is observed for an identical as-grown sample upon annealing. Annealing of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics