TITLE

Influence of band alignment on recombination in pseudomorphic Si1-xGex/Si quantum wells

AUTHOR(S)
Sugawara, Y.; Kishimoto, Y.; Akai, Y.; Fukatsu, S.
PUB. DATE
January 2005
SOURCE
Applied Physics Letters;1/3/2005, Vol. 86 Issue 1, p011907
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Unique potential lineup of pseudomorphic Si1-xGex/Si quantum wells (QWs) allows negative charge buildup in the near-surface region. Significant local charge imbalance created thereby between electrons and holes diminishes the efficiency of the otherwise dominating, nonradiative Shockley-Read-Hall recombination in the QWs at a low level of photoexcitation, which is evidenced by anomalous evolution of photoluminescence intensity and internal quantum efficiency with increasing excitation density.
ACCESSION #
15593198

 

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