Long-wavelength HgCdTe on silicon negative luminescent devices

Haigh, M. K.; Nash, G. R.; Gordon, N. T.; Edwards, J.; Graham, A.; Giess, J.; Hails, J. E.; Houlton, M.
January 2005
Applied Physics Letters;1/3/2005, Vol. 86 Issue 1, p011910
Academic Journal
We have investigated the negative luminescent properties of a device fabricated from metalorganic vapor phase epitaxy grown HgCdTe on a Si substrate. The peak emission was at 7.2μm, and the intrinsic Auger processes were found to be very well suppressed. The low currents (minimum current density, Jmin, of 0.84 A/cm2 at 295K) needed to drive these devices makes them suitable for a range of device applications.


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