TITLE

Electron and hole moveable islands in pyroelectric/semiconductor granular systems

AUTHOR(S)
Kachorovskii, V. Yu.; Shur, M. S.
PUB. DATE
January 2005
SOURCE
Applied Physics Letters;1/3/2005, Vol. 86 Issue 1, p012101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Spontaneous pyroelectric polarization induces strong built-in electric field in pyroelectric-semiconductor granular systems (pyroelectric grains in a semiconductor matrix or semiconductor grains in a pyroelectric matrix). At some critical value of the grain radius R=Rc, the built-in voltage drop across the grains becomes larger than the energy gap. In the intrinsic semiconductor, two moveable (electron and hole) islands with the size a&tild; √RcsR-Rcd appear at the grain surface for R.Rc. The plasma oscillations of such islands correspond to the terahertz range of frequencies. In an n-type semiconductor, the depletion and accumulation regions are formed due to a built-in electric field. For R.Rc, an inversion hole island might appear in the depletion region close to the grain interface. Spontaneous pyroelectric polarization induces strong built-in electric field in pyroelectric-semiconductor granular systems (pyroelectric grains in a semiconductor matrix or semiconductor grains in a pyroelectric matrix). At some critical value of the grain radius R=Rc, the built-in voltage drop across the grains becomes larger than the energy gap. In the intrinsic semiconductor, two moveable (electron and hole) islands with the size a&tild; √Rc(Rc-Rc) appear at the grain surface for R>Rc. The plasma oscillations of such islands correspond to the terahertz range of frequencies. In an n-type semiconductor, the depletion and accumulation regions are formed due to a built-in electric field. For R>Rc, an inversion hole island might appear in the depletion region close to the grain interface.
ACCESSION #
15593194

 

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