Minority carrier transport in p-type Zn0.9Mg0.1O doped with phosphorus

Lopatiuk, O.; Burdett, W.; Chernyak, L.; Ip, K. P.; Heo, Y. W.; Norton, D. P.; Pearton, S. J.; Hertog, B.; Chow, P. P.; Osinsky, A.
January 2005
Applied Physics Letters;1/3/2005, Vol. 86 Issue 1, p012105
Academic Journal
Minority carrier diffusion length and lifetime in p-Zn0.9Mg0.1O doped with phosphorus were obtained from local electron beam irradiation measurements. The irradiation resulted in an increase of up to 25% in minority electron diffusion length from the initial value of ∼2.12 μm and in a simultaneous decrease of the peak near-bandedge cathodoluminescence intensity. The observed phenomena are attributed to charging of phosphorus-related deep acceptor level(s), which is consistent with the activation energy of 256±20 meV found for the effect of electron injection in Zn0.9Mg0.1O.


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