Effects of tantalum penetration through hafnium oxide layer on carrier generation rate in silicon substrate and carrier mobility degradation

Kang, Chang Yong; Rhee, Se Jong; Choi, Chang Hwan; Akvar, M. S.; Zhang, Manhong; Lee, Taekhwi; Ok, Injo; Lee, Jack C.
January 2005
Applied Physics Letters;1/3/2005, Vol. 86 Issue 1, p012901
Academic Journal
This letter presents the effects of tantalum penetration through hafnium oxide on bulk carrier generation rates and carrier mobility degradation. The penetration of Ta atoms degraded the bulk carrier lifetime in the Si substrate. Surface nitrogen incorporation can be useful to mitigate Ta penetration into the Si substrate. The incorporated Ta in the dielectric was found to have no effect on the effective κ value. On the other hand, it increased pre-existing traps and interface states. Thus, mobility degradation for tantalum nitride gate devices was primarily caused by pre-existing traps and interface states of the high-k dielectrics.


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