TITLE

# Fermi level pinning and Hfâ€“Si bonds at HfO2: Polycrystalline silicon gate electrode interfaces

AUTHOR(S)
Xiong, K.; Peacock, P. W.; Robertson, J.
PUB. DATE
January 2005
SOURCE
Applied Physics Letters;1/3/2005, Vol. 86 Issue 1, p012904
SOURCE TYPE
DOC. TYPE
Article
ABSTRACT
Doped polycrystalline Si (poly-Si) gate electrodes on HfO2 films on Si substrates are found not to cause as large shifts in the flat band voltage as those of SiO2 on Si. This effect has been attributed to a weak pinning of the Fermi level at the top poly-Si HfO2 interface. The effect is shown to be consistent with the formation of Hfâ€“Si bonds at an otherwise O-terminated oxide interface. Vacancies, divacancies, and substitutional Si atoms are introduced into models of oxygen-terminated Siâ€“HfO2 (100) interfaces and the resulting Hfâ€“Si bonds are found to create a metallic interface with the Fermi level pinned at about 0.3 eV below the Si conduction band-edge.
ACCESSION #
15593179

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