High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

Chiang, H. Q.; Wager, J. F.; Hoffman, R. L.; Jeong, J.; Keszler, D. A.
January 2005
Applied Physics Letters;1/3/2005, Vol. 86 Issue 1, p013503
Academic Journal
Transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated. Field-effect mobilities of 5–15 and 20–50 cm2 V-1 s-1 are obtained for devices post-deposition annealed at 300 and 600 °C, respectively. TTFTs processed at 300 and 600 °C yield devices with turn-on voltage of 0–15 and -5–5 V, respectively. Under both processing conditions, a drain current on-to-off ratio greater than 107 is obtained. Zinc tin oxide is one example of a new class of high performance TTFT channel materials involving amorphous oxides composed of heavy-metal cations with (n-1)d10 ns0 (n>=4) electronic configurations.


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