TITLE

Response to “Comment on ‘Carrier trapping and current collapse mechanism in GaN metal-semiconductor field effect transistors’ ” [Appl. Phys. Lett. 86, 016101 (2005)]

AUTHOR(S)
Anwar, A. F. M.; Islam, Syed S.; Webster, Richard T.
PUB. DATE
January 2005
SOURCE
Applied Physics Letters;1/3/2005, Vol. 86 Issue 1, p016102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This article presents information on metal-semiconductor field effect transistors. The current collapse mechanisms in AlGaN heterostructure field-effect transistors (HFETs) must not be confused with the mechanisms in GaN metal semiconductor field-effect transistors (MESFETs). The MESFET structure that has been investigated has an N-type GaN channel grown over a thick semi-insulating GaN buffer, so the channel-buffer interface has a strong influence over the transistor performance. The differences reflect fundamental differences between the current collapse phenomena in HFETs and MESFETs.
ACCESSION #
15593165

 

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