TITLE

Mechanism for pinhole formation in GaN/AlN/Si(111) layers from steps at the substrate surface

AUTHOR(S)
Sanchez, A. M.; Dimitrakopulos, G. P.; Ruterana, P.
PUB. DATE
January 2005
SOURCE
Applied Physics Letters;1/3/2005, Vol. 86 Issue 1, p011917
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-resolution transmission electron microscopy has been used to investigate the connection between pinholes observed in the AlN buffer layer and steps at the (111) Si surface. Below the pinhole, two steps with different heights have been observed in the (111) Si substrate, which have been characterized using the topological theory formalism. The AlN growth on the top of such steps gives rise to islands with a nonzero displacement along the growth axis and the formation of c-component dislocations. The coalescence of these islands leads to the formation of highly strained areas, from which may originate pinholes.
ACCESSION #
15593151

 

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