Polarity control of ZnO films grown on nitrided c-sapphire by molecular-beam epitaxy

Wang, Xinqiang; Tomita, Yosuke; Roh, Ok-Hwan; Ohsugi, Masayuki; Che, Song-Bek; Ishitani, Yoshihiro; Yoshikawa, Akihiko
January 2005
Applied Physics Letters;1/3/2005, Vol. 86 Issue 1, p011921
Academic Journal
The polarity of molecular-beam epitaxy grown ZnO films was controlled on nitrided c-sapphire substrate by modifying the interface between the ZnO buffer layer and the nitrided sapphire. The ZnO film grown on nitrided sapphire was proven to be Zn-polar while the O-polar one was obtained by using gallium predeposition on nitrided sapphire, which was confirmed by coaxial impact collision ion scattering spectroscopy and chemical etching effect. The Zn-polar ZnO film showed higher growth rate, slightly better quality, and different surface morphology in comparison to the O-polar one.


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