Self-assembly of Ni nanocrystals on HfO2 and N-assisted Ni confinement for nonvolatile memory application

Tan, Zerlinda; Samanta, S. K.; Yoo, Won Jong; Lee, Sungjoo
January 2005
Applied Physics Letters;1/3/2005, Vol. 86 Issue 1, p013107
Academic Journal
We demonstrate memory property using Ni nanocrystals with mean diameter of 9 nm embedded in HfO2 high-k dielectric that are formed via a self-assembly process by sputtering and rapid thermal annealing. X-ray photoelectron spectroscopy shows that Ni penetrates into the 5 nm HfO2 after high temperature annealing above 800 °C in N2. However, the diffusion is suppressed by N incorporation into HfO2 by NH3 annealing. Metal-oxide-semiconductor structures were fabricated with Ni nanocrystals embedded in HfO2. An additional counterclockwise hysteresis of 2.1 V due to the charge trapping properties of the Ni nanocrystals was observed from a ±5 V sweep during capacitance–voltage electrical measurement.


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