TITLE

Self-assembly of Ni nanocrystals on HfO2 and N-assisted Ni confinement for nonvolatile memory application

AUTHOR(S)
Tan, Zerlinda; Samanta, S. K.; Yoo, Won Jong; Lee, Sungjoo
PUB. DATE
January 2005
SOURCE
Applied Physics Letters;1/3/2005, Vol. 86 Issue 1, p013107
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate memory property using Ni nanocrystals with mean diameter of 9 nm embedded in HfO2 high-k dielectric that are formed via a self-assembly process by sputtering and rapid thermal annealing. X-ray photoelectron spectroscopy shows that Ni penetrates into the 5 nm HfO2 after high temperature annealing above 800 °C in N2. However, the diffusion is suppressed by N incorporation into HfO2 by NH3 annealing. Metal-oxide-semiconductor structures were fabricated with Ni nanocrystals embedded in HfO2. An additional counterclockwise hysteresis of 2.1 V due to the charge trapping properties of the Ni nanocrystals was observed from a ±5 V sweep during capacitance–voltage electrical measurement.
ACCESSION #
15593131

 

Related Articles

  • Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing. Bethge, O.; Zimmermann, C.; Lutzer, B.; Simsek, S.; Smoliner, J.; Stöger-Pollach, M.; Henkel, C.; Bertagnolli, E. // Journal of Applied Physics;2014, Vol. 116 Issue 21, p214111-1 

    The impact of thermal post deposition annealing in oxygen at different temperatures on the Ge/Y2O3 interface is investigated using metal oxide semiconductor capacitors, where the yttrium oxide was grown by atomic layer deposition from tris(methylcyclopentadienyl)yttrium and H2O precursors on...

  • Synthesis of high-density PtSi nanocrystals for memory application. Bei Li; Jingjian Ren; Jianlin Liu // Applied Physics Letters;4/26/2010, Vol. 96 Issue 17, p172104 

    Vapor-solid-solid growth mechanism was employed to synthesize PtSi nanocrystals with density of 1.5×1012 cm-2 by introducing SiH4 onto Pt-catalyzed SiO2/Si substrate. The nanocrystal density and average size were measured by scanning electron microscope and the nanocrystal chemical nature...

  • Control of interfacial silicate between HfO2 and Si by high concentration ozone. Wang, L.; Xue, K.; Xu, J. B.; Huang, A. P.; Chu, Paul K. // Applied Physics Letters;2/13/2006, Vol. 88 Issue 7, p072903 

    By high concentration ozone oxidation at low temperature, the Hf-silicate interfacial layer between HfO2 and silicon substrate is effectively controlled. This is evident by investigating the chemical shifts of the Hf 4f and Si 2p core-level spectra with depth by using x-ray photoelectron...

  • Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices. Chu, L. K.; Lin, T. D.; Huang, M. L.; Chu, R. L.; Chang, C. C.; Kwo, J.; Hong, M. // Applied Physics Letters;5/18/2009, Vol. 94 Issue 20, p202108 

    Ga2O3(Gd2O3) (GGO) directly deposited on Ge substrate in ultrahigh vacuum, without a passivation layer such as GeOxNy or Si, has demonstrated excellent electrical performances and thermodynamic stability. Energy-band parameters of GGO/Ge have been determined by in situ x-ray photoelectron...

  • Nondestructive estimation of depletion layer profile in Nb-doped SrTiO3/(La,Ba)MnO3 heterojunction diode structure by hard x-ray photoemission spectroscopy. Tanaka, Hidekazu; Satoh, Issei; Kanki, Teruo; Ikenaga, Eiji; Kobata, Masaaki; Kim, Jung Jin; Ueda, Shigenori; Kobayashi, Keisuke // Applied Physics Letters;3/28/2011, Vol. 98 Issue 13, p133505 

    We report the hard x-ray (hv=7.94 keV) core level photoemission spectroscopy to determine the depletion layer profile in Nb-doped SrTiO3/(La,Ba)MnO3 n-p+ diode structures. The Sr 2p3/2 spectra were detected penetrating even through (La,Ba)MnO3 over layer with thickness of 20 nm. The spectrum for...

  • Photoemission spectroscopy study of the lanthanum lutetium oxide/silicon interface. Nichau, A.; Schnee, M.; Schubert, J.; Besmehn, A.; Rubio-Zuazo, J.; Breuer, U.; Bernardy, P.; Holländer, B.; Mücklich, A.; Castro, G. R.; von Borany, J.; Buca, D.; Mantl, S. // Journal of Chemical Physics;4/21/2013, Vol. 138 Issue 15, p154709 

    Rare earth oxides are promising candidates for future integration into nano-electronics. A key property of these oxides is their ability to form silicates in order to replace the interfacial layer in Si-based complementary metal-oxide field effect transistors. In this work a detailed study of...

  • Kinetics of interdiffusion in semiconductor ternary quantum dots. Han, Xu; Pandey, Sumeet C.; Maroudas, Dimitrios // Applied Physics Letters;10/1/2012, Vol. 101 Issue 14, p141906 

    We develop a one-dimensional transient model of species transport in ternary quantum dots (QDs) and implement the model for analysis of group-VI species interdiffusion kinetics in ZnSe1-xSx nanocrystals. We use the model results for the interpretation of x-ray photoelectron spectroscopy data for...

  • Characterization of Colloidal Quantum Dot Ligand Exchange by X-ray Photoelectron Spectroscopy. Atewologun, Ayomide; Ge, Wangyao; Stiff-Roberts, Adrienne // Journal of Electronic Materials;May2013, Vol. 42 Issue 5, p809 

    Colloidal quantum dots (CQDs) are chemically synthesized semiconductor nanoparticles with size-dependent wavelength tunability. Chemical synthesis of CQDs involves the attachment of long organic surface ligands to prevent aggregation; however, these ligands also impede charge transport....

  • Process Monitoring And Surface Characterization By XPS In A Semiconductor Fabrication Line. Cabuil, N.; Le Gouil, A.; Dickson, B.; Lagha, A.; Aminpur, M.; Chaton, C.; Royer, J.-C.; Doclot, O. // AIP Conference Proceedings;9/26/2007, Vol. 931 Issue 1, p191 

    This paper discusses the implementation of an X-ray Photoelectron Spectrometer as a tool for process monitoring and characterizing thin film chemical composition and thickness in a manufacturing environment. Process monitoring of ultra thin nitrided gate oxides is performed on monitor wafers...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics