Single-crystal organic field-effect transistors based on dibenzo-tetrathiafulvalene

Mas-Torrent, M.; Hadley, P.; Bromley, S. T.; Crivillers, N.; Veciana, J.; Rovira, C.
January 2005
Applied Physics Letters;1/3/2005, Vol. 86 Issue 1, p012110
Academic Journal
We report on the fabrication and characterization of field-effect transistors based on single crystals of the organic semiconductor dibenzo-tetrathiafulvalene (DB-TTF). We demonstrate that it is possible to prepare very-good-quality DB-TTF crystals from solution. These devices show high field-effect mobilities typically in the range 0.1–1 cm2/V s. The temperature dependence was also studied revealing an initial increase of the mobility when lowering the temperature until it reached a maximum, after which the mobility decreased following a thermally activated behavior with activation energies between 50 and 60 meV. Calculations of the molecular reorganization energy and intermolecular transfer integrals for this material were also performed and are in agreement with the high mobility observed in this material.


Related Articles

  • Strain effect and channel length dependence of bias temperature instability on complementary metal-oxide-semiconductor field effect transistors with high-k/SiO2 gate stacks. Liao, J. C.; Fang, Y. K.; Hou, Y. T.; Hung, C. L.; Hsu, P. F.; Lin, K. C.; Huang, K. T.; Lee, T. L.; Liang, M. S. // Applied Physics Letters;9/1/2008, Vol. 93 Issue 9, p092101 

    The strain effect and channel length dependence of bias temperature instability on dual metal gate complementary metal-oxide-semiconductor field enhanced transistors with HfSiON dielectric were studied in detail. For channel length larger than 0.1 μm, both positive and negative bias...

  • The dipole model of narrowing of the energy gap between the Hubbard bands in slightly compensated semiconductors. Poklonski, N.; Vyrko, S.; Zabrodskiĭ, A. // Semiconductors;Apr2006, Vol. 40 Issue 4, p394 

    A model of the narrowing of the energy gap between the Hubbard bands (the A 0 and A + bands for acceptors and the D 0 and D − bands for donors) with increasing concentration of hydrogen-like dopants at low concentrations of the compensating impurity is suggested. The width of the impurity...

  • Electrical conductivity of Bi12SiO20 single crystals doped with Os, Re, Ru, and Rh. Milenov, T.I.; Veleva, M.N.; Petrova, D.P.; Gospodinov, M.M.; Skorikov, V.M.; Egorysheva, A.V.; Kargin, Yu.F.; Vasil'ev, A.Ya. // Inorganic Materials;Feb2005, Vol. 41 Issue 2, p152 

    Bi12 SiO20 crystals doped with Os, Re, Ru, and Rh were grown by the Czochralski technique, and their conductivity (real and imaginary parts) was measured as a function of temperature and frequency. The results are interpreted as evidence that the charge transport in the crystals is due to...

  • Organic double-gate field-effect transistors: Logic-AND operation. Lay-Lay Chua; Friend, Richard H.; Ho, Peter K. H. // Applied Physics Letters;12/19/2005, Vol. 87 Issue 25, p253512 

    A unipolar double-gate field-effect transistor (DG-FET) with AND logic functionality is demonstrated. This operation regime arises through a symmetric electrostatic coupling of two conduction channels via the intrinsic semiconductor layer. According to simulation, this mode of operation is...

  • Room temperature sensing of ozone by transparent p-type semiconductor CuAlO2. Zheng, X. G.; Taniguchi, K.; Takahashi, A.; Liu, Y.; Xu, C. N. // Applied Physics Letters;9/6/2004, Vol. 85 Issue 10, p1728 

    A transparent p-type semiconductor, CuAlO2, shows selective and reversible response to ozone gas at room temperature. All existing commercial semiconductor ozone sensors are of n type. This study demonstrates the feasibility of developing an inexpensive p type and transparent ozone sensor. Types...

  • Mixed (Ionic and Hole) Conductivity of Tl3VS4 Crystals. Belyaev, B. V.; Gritskikh, V. A.; Zhikharev, I. V.; Kara-Murza, S. V.; Korchikova, N. V. // Physics of the Solid State;Aug2004, Vol. 46 Issue 8, p1420 

    A model of mixed (ionic and hole) conductivity in Tl3VS4 crystals at close-to-room temperatures is proposed. The significant fraction of the ionic conductivity component (∼70% of the total conductivity) is explained by the nonstoichiometric electrically active thallium vacancies, whose...

  • Creating Standard Resistors Based on Germanium and Silicon Single Crystals Grown under Microgravity Conditions. Kartavykh, A. V.; Rakov, V. V. // Technical Physics Letters;Nov2006, Vol. 32 Issue 11, p990 

    Requirements on the creation of standard resistors (SRs), which are necessary for the calibration of microprobe complexes used for the diagnostics of electrical homogeneity of single crystal semiconductors, are considered. SR prototypes have been created based on Sb-doped Ge single crystals...

  • Significant increase in conduction band discontinuity due to solid phase epitaxy of Al2O3 gate insulator films on GaN semiconductor. Toyoda, S.; Shinohara, T.; Kumigashira, H.; Oshima, M.; Kato, Y. // Applied Physics Letters;12/3/2012, Vol. 101 Issue 23, p231607 

    We have investigated band discontinuities and chemical structures of Al2O3 gate insulator films on n-type GaN semiconductor by photoemission and x-ray absorption spectroscopy. It is found that the solid phase epitaxy at the GaN crystal during annealing procedures at 800 °C leads to phase...

  • Metal piezoelectric semiconductor field effect transistors for piezoelectric strain sensors. Yuh-Renn Wu; Singh, Jasprit // Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1223 

    In this letter, we examine the potential of a functional device that can have good transistor and stress sensor properties. The device examined is based on the use of a thin oxide with high piezoelectric coefficients under the gate region. Channel charge and current are controlled by gate...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics