Effects of rapid thermal annealing on quality of In0.52Al0.48As/In0.53Ga0.47As multiquantum wells grown on a compositionally graded InAlAs/InAlGaAs metamorphic buffer layer

Ihn, Soo-Ghang; Jo, Seong-June; Song, Jong-In
December 2004
Applied Physics Letters;12/27/2004, Vol. 85 Issue 26, p6335
Academic Journal
We report improvement in crystalline quality of In0.52Al0.48As/In0.53Ga0.47As multiquantum wells (MQWs) and compositionally graded InAlAs/InAlGaAs metamorphic buffer grown on GaAs by using postgrowth rapid thermal annealing (RTA). Dependence of optical and structural properties of the MQWs on RTA was investigated by using photoluminescence (PL) and triple-axis x-ray diffraction measurements. After the RTA, the PL intensity of the MQWs increased, while the linewidth decreased. Also, the triple-axis contour maps of the MQWs showed increase in peak intensity of epilayers as well as crystalline reformation indicated by narrower mosaic spread and restoration of epilayer tilt to the substrate orientation.


Related Articles

  • Niobium nitride films formed by rapid thermal processing (RTP): a study of depth profiles and interface reactions by complementary analytical techniques. Berendes, A.; Brunkahl, O.; Angelkort, C.; Bock, W.; Hofer, F.; Warbichler, P.; Kolbesen, B. O. // Analytical & Bioanalytical Chemistry;Jun2004, Vol. 379 Issue 4, p554 

    The nitridation of niobium films approximately 250 and 650 nm thick by rapid thermal processing (RTP) at 800 °C in molecular nitrogen or ammonia was investigated. The niobium films were deposited by electron beam evaporation on silicon substrates covered by a 100 or 300 nm thick thermally...

  • Violet-blue GaN homojunction light emitting diodes with rapid thermal annealed p-type layers. Khan, M. Asif; Chen, Q. // Applied Physics Letters;4/17/1995, Vol. 66 Issue 16, p2046 

    Examines the properties of gallium nitride homojunction light emitting diodes (LED) using rapid thermal annealing (RTA). Characteristics of the LED structures with RTA p-type layers; Function of the forward driving current; Relationship of output power and input current; Presentation of the...

  • Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction. David, A.; Meier, C.; Sharma, R.; Diana, F. S.; DenBaars, S. P.; Hu, E.; Nakamura, S.; Weisbuch, C.; Benisty, H. // Applied Physics Letters;9/5/2005, Vol. 87 Issue 10, p101107 

    We observe experimentally by photoluminescence the band structure and specific emission properties of an in-plane, light-diffracting photonic crystal formed onto a multimode gallium nitride waveguide. Clear-cut two-dimensional photonic crystal effects are reported. Comparison with modeling...

  • Correlation of photoluminescent quantum efficiency and device characteristics for the soluble electrophosphorescent light emitter with interfacial layers. Kang, Nam Su; Ju, Byeong-Kwon; Kim, Ji Whan; Kim, Jang-Joo; Yu, Jae-Woong; Chin, Byung Doo // Journal of Applied Physics;Jul2008, Vol. 104 Issue 2, p024511 

    We have investigated the effects of interfacial layers on the properties of soluble phosphorescent organic light emitting devices. Two kinds of polyfluorene-based interfacial layer materials have been studied; both were spin coated on top of PEDOT:PSS to form the insoluble layers by thermal...

  • Photoluminescence from rapid thermal annealed and pulsed-laser-annealed, ion-implanted Si. Wagner, J.; Gelpey, J. C.; Hodgson, R. T. // Applied Physics Letters;1984, Vol. 45 Issue 1, p47 

    Low-temperature photoluminescence studies of ion-implanted and rapid thermal annealed or pulsed-laser-annealed Si are reported. The samples were implanted with As, P, Sb, or B. The luminescence spectra of the pulsed-laser-annealed samples show strong sharp luminescence lines from radiation...

  • Morphology and optical properties of titanium-doped porous silicon carbide layers. Bacherikov, Yu. Yu.; Konakova, R. V.; Lytvyn, O. S.; Okhrimenko, O. B.; Svetlichnyi, A. M.; Moskovchenko, N. N. // Technical Physics Letters;Feb2006, Vol. 32 Issue 2, p140 

    The effect of rapid thermal annealing (RTA) in oxygen on the properties of titanium-doped porous silicon carbide (por-SiC) layers has been studied. The data on the surface morphology and the photoluminescence (PL) spectra show that the high-temperature diffusion annealing is accompanied by the...

  • Rapid thermal annealing effects on the optical properties in strained CdTe (100)/GaAs (100) heterostructures. Lee, H. S.; Lee, K. H.; Kim, J. S.; Park, H. L.; Kim, T. W. // Journal of Materials Science;Dec2004, Vol. 39 Issue 23, p7115 

    Examines the effects of rapid thermal annealing on the optical properties in strained CdTe thin films heterostructures. Dependence of the optical properties on the annealing treatment for CdTe thin films; Conduct of photoluminescence measurements to investigate the optical properties; Detection...

  • Effects of rapid thermal annealing on GaAs1-xBix alloys. Mohmad, A. R.; Bastiman, F.; Hunter, C. J.; Richards, R.; Sweeney, S. J.; Ng, J. S.; David, J. P. R. // Applied Physics Letters;7/2/2012, Vol. 101 Issue 1, p012106 

    The effects of rapid thermal annealing on the optical and structural properties of GaAs1-xBix alloys for x ranging from 0.022 to 0.065 were investigated. At room temperature, the annealed GaAs1-xBix showed modest improvement (∼3 times) in photoluminescence (PL) while the PL peak wavelength...

  • Electroless nickel/gold Ohmic contacts to p-type GaN. Lewis, L.; Casey, D. P.; Jeyaseelan, A. V.; Rohan, J. F.; Maaskant, P. P. // Applied Physics Letters;2/11/2008, Vol. 92 Issue 6, p062113 

    A solution based approach to forming Ohmic contacts to p-type GaN is described. Electroless plated Ni/Au contacts are shown to compare favorably with traditional evaporated contacts, with contact resistivities ρc in the region of 10-2 Ω cm2. These values are readily achieved after a rapid...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics