TITLE

Epitaxial growth and surface modeling of ZnO on c-plane Al2O3

AUTHOR(S)
Murphy, T. E.; Walavalkar, S.; Phillips, J. D.
PUB. DATE
December 2004
SOURCE
Applied Physics Letters;12/27/2004, Vol. 85 Issue 26, p6338
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The growth of ZnO on c-plane sapphire by molecular beam epitaxy is presented for varying ratios of zinc and oxygen flux. Reflection high energy electron diffraction patterns during epitaxial growth suggest clear differences in the evolution of surface morphology for differing Zn flux. Atomic force microscope images indicate sizable hexagonal features in the surface morphology for Zn-rich material. A stochastic growth model is presented to represent the experimental ZnO surface, where differences in adatom lateral diffusion length are suspected to be the cause of the differing surface morphology.
ACCESSION #
15403245

 

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