Shapes of InAs quantum dots on InGaAs/InP

Hwang, Heedon; Yoon, Sukho; Kwon, Hyeok; Yoon, Euijoon; Kim, Hong-Seung; Lee, Jeong Yong; Cho, Benjamin
December 2004
Applied Physics Letters;12/27/2004, Vol. 85 Issue 26, p6383
Academic Journal
InAs self-assembled quantum dots were grown on InGaAs lattice-matched on InP by metalorganic chemical vapor deposition. The facet formation on the dot was investigated by atomic force microscopy and transmission electron microscopy. The {136}-faceted InAs dots were elongated along either [1&3bar;0] or [&3bar;10] to form parallelogram-shaped islands analogous to hut cluster formation in SiGe/Si quantum dots. Some parallelogram dots also exhibited {110} faceting, presumably on undergoing a shape transition toward dots with facets of higher symmetry.


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