Application of modified transmission line model to measure p-type GaN contact

Chen, N. C.; Tseng, C. Y.; Chiu, A. P.; Shih, C. F.; Chang, P. H.
December 2004
Applied Physics Letters;12/20/2004, Vol. 85 Issue 25, p6086
Academic Journal
This work presented a procedure for extending the modified transmission line model to measure non-ohmic contact. This method was applied to the p-type GaN contact with the resulting sheet resistance similar to that determined by the Hall measurement. The voltage–current density (V–J) curve obtained using this procedure was also similar to that by directly analyzing the current–voltage curve of a light-emitting diode. Both results revealed the validity of this procedure. Rather than yielding a specific contact resistance for an ohmic contact, this procedure yielded a V–J curve to describe the non-ohmic contact characteristics. Similarly, this procedure could also extend the linear transmission line model to the analysis of non-ohmic contacts.


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