In-rich In1-xGaxN films by metalorganic vapor phase epitaxy

Chang, Chin-An; Chuan-Feng Shih; Nai-Chuan Chen; Lin, T. Y.; Kuo-Shiun Liu
December 2004
Applied Physics Letters;12/20/2004, Vol. 85 Issue 25, p6131
Academic Journal
Single crystalline In1-xGaxN films containing high In content (70%–100%) were grown by metalorganic vapor phase epitaxy. A linear relation was observed between the lattice constants and gas phase Ga/In ratios. The surface morphology changed from pyramid for InN to more planar ones for the InGaN alloys with increasing Ga content. The electron mobility decreased rapidly from 1200 cm2/V s for InN to less than 100 cm2/V s for In0.7Ga0.3N, with a carrier concentration of low- 1019 cm-3 for all the as-grown films. Using photoluminescence a single emission peak was observed at 1.4–1.6 μm for the In-rich InGaN with decreasing wavelengths up to below 20% of Ga. Two peaks were observed for the In0.80Ga0.20N, however, indicating possible phase separation. The x-ray photoelectron spectroscopic measurement showed shifts to higher binding energies for both In and Ga with increasing Ga content. The estimated alloy composition, however, depended sensitively on the sputtering conditions of the samples.


Related Articles

  • Bandstructure effects in ultra-thin-body double-gate field effect transistor: A fullband analysis. Majumdar, Kausik; Bhat, Navakanta // Journal of Applied Physics;Jun2008, Vol. 103 Issue 11, p114503 

    The properties of an n-channel ultra-thin-body (UTB) double-gate field effect transistor (DGFET), resulting from the bandstructure of the thin film Si channel, are discussed in this paper. The bandstructure has been calculated using a ten-orbital sp3d5s* tight-binding method. A number of...

  • Phase competition induced nonlinear elastoresistance effect in thin films of Pr0.7Sr0.3MnO3. Wang, J. F.; Gao, J. // Applied Physics Letters;3/26/2012, Vol. 100 Issue 13, p131903 

    Thin films of Pr0.7Sr0.3MnO3 grown on 0.7PbMg1/3Nb2/3O3-0.3PbTiO3 substrates were reversibly strained via the converse piezoelectric effect. The transport properties of Pr0.7Sr0.3MnO3 were effectively modulated by the electric fields across the substrate. The roles of strain were explored by...

  • Raman scattering measurements of phonon anharmonicity in CuAlO2 thin films. Singh, Manoj K.; Dussan, S.; Sharma, Ganpat L.; Katiyar, Ram S. // Journal of Applied Physics;Dec2008, Vol. 104 Issue 11, p113503 

    CuAlO2 thin films were grown on single crystalline sapphire substrates with c-axis orientation by rf sputtering method. The x-ray diffraction data indicate the formation of delafossite structure and tend to be oriented along (001). Temperature dependent Raman spectra of CuAlO2 thin films were...

  • Phase-field modeling of stress-induced surface instabilities in heteroepitaxial thin films. Seol, D. J.; Hu, S. Y.; Liu, Z. K.; Chen, L. Q.; Kim, S. G.; Oh, K. H. // Journal of Applied Physics;8/15/2005, Vol. 98 Issue 4, p044910 

    A phase-field model for investigating the surface morphological evolution of a film is developed, taking into account the surface energies of film and substrate, the interfacial energy between the film and substrate, and the elastic energy associated with the lattice mismatch between the film...

  • Enhancement of multiferroic properties of Pb(Fe1/2Nb1/2)O3 thin films on SrRuO3 buffered SrTiO3 substrates. Li Yan; Xin Zhao; Jiefang Li; Viehland, D. // Applied Physics Letters;5/11/2009, Vol. 94 Issue 19, p192903 

    We report multiferroic properties of Pb(Fe1/2Nb1/2)O3 (or PFN) epitaxial thin layers grown on (001), (110), and (111) SrTiO3 substrates with and without a SrRuO3 (SRO) buffer. Our findings are as follows: (i) the constraint stress on (001) substrates is more than ten times larger than those on...

  • Dispersionless modes and the superconductivity of ultrathin films. Barash, Yu. S.; Nagornykh, P. I. // JETP Letters;7/1/2006, Vol. 83 Issue 9, p376 

    A self-consistent analytical solution of the problem of the superconductivity of ultrathin metal films is found within the tight-binding model for normal-metal electrons with a simple example of a film of three atomic layers. Superconductivity is not destroyed in atomically thin films if the...

  • Thickness dependent metal-insulator transition and dimensional crossover for weak localization in Si0.02Zn0.98O thin films grown by pulsed laser deposition. Das, Amit K.; Ajimsha, R. S.; Kukreja, L. M. // Journal of Applied Physics;2014, Vol. 115 Issue 19, p193705-1 

    Metal to insulator transition was observed in Si0.02Zn0.98O (SZO) films, grown by pulsed laser deposition on sapphire substrates, as the thicknesses of the films were reduced from ~40 to 15 nm. The SZO film with thickness of ~40 nm showed typical metallic behavior in temperature dependent...

  • Electronic transport properties of Si thin film from bulk to sub-nm thickness: a first-principles study. Yamauchi, Jun // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p83 

    To investigate transport properties of the channel region in silicon on insulator (SOI), we studied the electronic structure of hydrogen-terminated Si(001) and (111) slab models by the density functional theory. It is found that the electronic properties are almost the same for those of the bulk...

  • Current transport in semiconductor nanowires with built-in barriers based on a 1D transfer matrix calculation. Zervos, M.; Pelekanos, N. T. // Journal of Applied Physics;Sep2008, Vol. 104 Issue 5, p054302 

    A one dimensional (1D) transfer matrix calculation of current transport in semiconductor nanowires with built-in barriers is described within the effective mass approximation by taking into account (i) the quantum confinement in the radial direction and (ii) the Fermi level position with respect...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics