Direct observations of dislocation half-loops inserted from the surface of the GeSi heteroepitaxial film

Bolkhovityanov, Yu. B.; Deryabin, A. S.; Gutakovskii, A. K.; Revenko, M. A.; Sokolov, L. V.
December 2004
Applied Physics Letters;12/20/2004, Vol. 85 Issue 25, p6140
Academic Journal
The initial stage of relaxation of mechanical stresses in the Ge0.32Si0.68/Si(001) heterostructure grown by low-temperature (300 °C) molecular-beam epitaxy is studied by means of transmission electron microscopy. Dislocation half-loops propagating from the film surface and generating misfit dislocations during expansion are visualized.


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