Photoemission study of energy-band alignment for RuOx/HfO2/Si system

Li, Q.; Wang, S. J.; Li, K. B.; Huan, A. C. H.; Chai, J. W.; Pan, J. S.; Ong, C. K.
December 2004
Applied Physics Letters;12/20/2004, Vol. 85 Issue 25, p6155
Academic Journal
Conductive oxides RuOx as alternative electrode on high-κ HfO2 gate dielectric have been fabricated by ultrahigh-vacuum sputtering and subsequently oxidized using oxygen plasma. The energy-band alignment for the RuOx/HfO2/Si system and the oxidation-state dependence of barrier height for RuOx contacting to HfO2 dielectrics has been analyzed by x-ray photoemission spectroscopy. The valence- and conduction-band offsets of HfO2/Si are determined to be 3.05±0.1 and 1.48±0.1 eV, respectively. The barrier heights for the RuOx contacting to HfO2 are oxidation-state dependent, in the range of 1.95–2.73 eV.


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