Optical characteristics of arsenic-doped ZnO nanowires

Woong Lee; Min-Chang Jeong; Jae-Min Myoung
December 2004
Applied Physics Letters;12/20/2004, Vol. 85 Issue 25, p6167
Academic Journal
The effect of arsenic doping on optical characteristics of ZnO nanowires was investigated by photoluminescence spectroscopy carried out at 13–290 K. In as-grown nanowires, emission due to acceptor-bound excitons predominated at low temperatures; as temperatures increased, emission due to recombination of free excitons prevailed. Arsenic-doped nanowires exhibited emission due to acceptor-bound excitons with no free exciton emission in the whole temperature range, indicating the formation of the acceptor level within the ZnO nanowire by arsenic doping.


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