Effects of n-type 4H-SiC epitaxial wafer quality on reliability of thermal oxides

Senzaki, Junji; Kojima, Kazutoshi; Fukuda, Kenji
December 2004
Applied Physics Letters;12/20/2004, Vol. 85 Issue 25, p6182
Academic Journal
The reliability of thermal oxides was investigated on n-type 4H-SiC(0001) epitaxial wafers with different metal impurity concentrations and surface roughness. Time-zero dielectric breakdown measurements showed that almost all of the thermal oxides ruptured at a field-to-breakdown (EBD) of 10 MV/cm, and that the maximum EBD was 11 MV/cm, despite the influence of the epitaxial wafer. On the other hand, time-dependent dielectric breakdown measurements indicated that the charge-to-breakdown (QBD) of the thermal oxides was influenced by the epitaxial wafer. This suggests that two types of oxide breakdown regimes exist under a high-stress field: one resulting from wafer influences, and the other intrinsic.


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