TITLE

Low-resistivity and transparent indium-oxide-doped ZnO ohmic contact to p-type GaN

AUTHOR(S)
Jae-Hong Lim; Dae-Kue Hwang; Hyun-Sik Kim; Jin-Yong Oh; Jin-Ho Yang; R. Navamathavan; Seong-Ju Park
PUB. DATE
December 2004
SOURCE
Applied Physics Letters;12/20/2004, Vol. 85 Issue 25, p6191
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the indium-oxide-doped ZnO (IZO) transparent ohmic contact to the p-GaN. The IZO transparent ohmic contact layer was deposited on p-GaN by e-beam evaporation. The transmittance of an IZO film with a thickness of 250 nm was 84%–92% for the light in the wavelength range of 400 and 600 nm. In addition, the IZO contact film yielded a low specific contact resistance of 3.4×10-4 Ω cm2 on p-GaN when annealed at 600 °C for 5 min under a nitrogen ambient. Auger electron spectroscopy and x-ray photoemission spectroscopy analyses of the IZO and p-GaN interface indicated that Ga atoms had out-diffused and an InN phase was formed at the interface region after the thermal annealing process, resulting in a decrease in contact resistance. The light output power of a light-emitting diode (LED) with an IZO ohmic contact layer was increased by 34% at 83 mW of electrical input power compared to that of a LED with a Ni/Au ohmic contact layer.
ACCESSION #
15374339

 

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