Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

Slobodskyy, T.; Rüster, C.; Fiederling, R.; Keller, D.; Gould, C.; Ossau, W.; Schmidt, G.; Molenkamp, L. W.
December 2004
Applied Physics Letters;12/20/2004, Vol. 85 Issue 25, p6215
Academic Journal
We have investigated the growth by molecular-beam epitaxy of the II–VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by Nomarski and scanning electron microscopy. Optical properties of (Zn,Mn)Se have been studied by photoluminescence and a giant Zeeman splitting of up to 30 meV has been observed. Our observations indicate a high crystalline quality of the epitaxial films.


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