Interface states in cycled hot electron injection program/hot hole erase silicon–oxide-nitride–oxide–silicon memories

Daniel, Ramiz; Yossi Shaham-Diamand; Yakov Roizin
December 2004
Applied Physics Letters;12/20/2004, Vol. 85 Issue 25, p6266
Academic Journal
Charge pumping measurements were performed to characterize the interface between silicon and bottom oxide in silicon–oxide-nitride–oxide–silicon memory transistors, where information is stored as charges in nitride at the edges of the channel. The charge pumping signal was found to strongly increase with the number of performed program/erase cycles, thus indicating the creation of traps with a density on the order of 1012 cm-2 (after 100 000 cycles). To estimate the length of the degraded region, the charge pumping signal dependence on the drain voltage was compared with the simulated drain depletion length using TSUPREM/Medici software. The damaged length calculated from the metallurgical junction is about 200 Å at the beginning of the endurance test and increases to 500 Å after 100 000 cycles.


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