Photoelectrical properties of molecular layer consisting of chlorophyll a/ferredoxin heterostructure

Yun Suk Nam; Jeong-Woo Choi; Won Hong Lee
December 2004
Applied Physics Letters;12/20/2004, Vol. 85 Issue 25, p6275
Academic Journal
Photoelectrical properties of biomolecular heterostructures are investigated. Ferredoxin and chlorophyll a were used as an electron acceptor and a sensitizer in the heterostructure by mimicking the photosynthesis. Self-assembly layer of ferredoxin was formed on Au-coated glass, and then chlorophyll a was deposited onto the ferredoxin layer by Langmuir–Blodgett method. The photoinduced current flow was observed by repeated step illumination of 488 nm light irradiation. The rectifying property by the scanning-tunneling-spectroscopy-based current–voltage characteristic was achieved in the ferredoxin/chlorophyll a heterostructure. The ferredoxin/chlorophyll a heterostructure was functioned as the molecular diode and switching device with photocurrent generation and rectifying property. Proposed molecular diode can be usefully applied for the development of molecular-scale bioelectronic devices such as the diode, switch, and solar cell.


Related Articles

  • Structural Mechanisms of Optimization of the Photoelectric Properties of CdS/CdTe Thin-Film Heterostructures. Khrypunov, G. S. // Semiconductors;Oct2005, Vol. 39 Issue 10, p1224 

    Comparative studies of the effect of chloride treatment of CdS/CdTe thin-film heterostructures on the output characteristics of ITO/CdS/CdTe/Cu/Au solar cells and the crystal structure of their base CdTe layer are carried out. Structural mechanisms determining variation in the efficiency of...

  • Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon. Tolle, John; Roucka, Radek; Chizmeshya, Andrew V. G.; Kouvetakis, John; D’Costa, Vijay R.; Menéndez, José // Applied Physics Letters;6/19/2006, Vol. 88 Issue 25, p252112 

    We describe the compliant behavior of Ge1-ySny buffer layers grown strain-free on Si(100). Deposition of lattice-mismatched epilayers on these buffers introduces significant strains in both systems. Ge1-x-y′SixSny′ and Ge1-xSix alloys are deposited on these buffers via reactions of...

  • On the alleviation of Fermi-level pinning by ultrathin insulator layers in Schottky contacts. Mönch, Winfried // Journal of Applied Physics;Apr2012, Vol. 111 Issue 7, p073706 

    With a few exceptions, metal-semiconductor or Schottky contacts are rectifying. Intimate n-Ge Schottky contacts are the most extreme example in that their barrier heights are almost independent of the metal used. Such behavior is characterized as pinning of the Fermi level. Quite recently,...

  • Modulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility p-type heterostructures. Fischer, F.; Schuh, D.; Bichler, M.; Abstreiter, G.; Grayson, M.; Neumaier, K. // Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p192106 

    We implement metallic layers of Si-doped (110) GaAs as modulation doping in high mobility p-type heterostructures, changing to p-growth conditions for the doping layer alone. The strongly autocompensated doping is characterized in bulk samples first, identifying the metal-insulator transition...

  • Growth and Photoelectric Properties of Graded-Gap Si�(Si2)1 � x(GaP)x Heterostructures. Sapaev, B.; Saidov, A. S.; Dadamukhamedov, S. // Technical Physics;Sep2004, Vol. 49 Issue 9, p1243 

    Theoretical grounds for formation of continuous substitutional solid solutions are analyzed taking into account the generalized moments, the difference in valence, and covalent radii of initial components. On the basis of these studies, the technology of formation of epitaxial (Si2)1-x(GaP)x(0 =...

  • Giant photovoltaic effects driven by residual polar field within unit-cell-scale LaAlO3 films on SrTiO3. Haixing Liang; Long Cheng; Xiaofang Zhai; Nan Pan; Hongli Guo; Jin Zhao; Hui Zhang; Lin Li; Xiaoqiang Zhang; Xiaoping Wang; Changgan Zeng; Zhenyu Zhang; J. G. Hou // Scientific Reports;6/14/2013, p1 

    For polar/nonpolar heterostructures, Maxwell's theory dictates that the electric potential in the polar components will increase divergently with the film thickness. For LaAlO3/SrTiO3, a conceptually intriguing route, termed charge reconstruction, has been proposed to avert such "polar...

  • Optically patterned nuclear doughnuts in GaAs/MnAs heterostructures. Stephens, J.; Berezovsky, J.; Kawakami, R. K.; Gossard, A. C.; Awschalom, D. D. // Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1184 

    We demonstrate a scheme for optically patterning nuclear-spin polarization in semiconductor/ferromagnet heterostructures. A scanning time-resolved Kerr rotation microscope is used to image the nuclear-spin polarization that results when GaAs/MnAs epilayers are illuminated with a focused laser...

  • Type-I Ge/Ge1-x-ySixSny strained-layer heterostructures with a direct Ge bandgap. Menéndez, J.; Kouvetakis, J. // Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1175 

    The electronic properties of Ge/Ge1-x-ySixSny strained-layer heterostructures are predicted theoretically. It is found that a lattice-matched system with fully strained Ge layers and relaxed Ge1-x-ySixSny alloys can have a direct fundamental bandgap with spatial localization in the Ge layers...

  • Special Features of Structural Interaction in (AlGaIn)N/GaN Heterostructures Used as Dislocation Filters. Soshnikov, I. P.; Ledentsov, N. N.; Tsatsul'nikov, A. F.; Sakharov, A. V.; Lundin, W. V.; Zavarin, E. A.; Fomin, A. V.; Litvinov, D.; Hahn, E.; Gerthsen, D. // Semiconductors;Jan2005, Vol. 39 Issue 1, p100 

    The behavior of threading dislocations in AlGaN and InGaN layers incorporated into GaN-based heterostructures is studied. It is shown that InGaN layers with an intermediate composition can be used as the most effective dislocation filters. Estimations of the stresses generated by dislocations...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics