Why can CuInSe2 be readily equilibrium-doped n-type but the wider-gap CuGaSe2 cannot?

Yu-Jun Zhao; Clas Persson; Stephan Lany; Alex Zunger
December 2004
Applied Physics Letters;12/13/2004, Vol. 85 Issue 24, p5860
Academic Journal
The wider-gap members of a semiconductor series such as diamond→Si→Ge or AlN→GaN→InN often cannot be doped n-type at equilibrium. We study theoretically if this is the case in the chalcopyrite family CuGaSe2→CuInSe2, finding that: (i) Bulk CuInSe2 (CIS, Eg=1.04 eV) can be doped at equilibrium n-type either by Cd or Cl, but bulk CuGaSe2 (CGS, Eg=1.68 eV) cannot; (ii) result (i) is primarily because the Cu-vacancy pins the Fermi level in CGS farther below the conduction band minimum than it does in CIS, as explained by the “doping limit rule;” (iii) Cd doping is better than Cl doping, in that CdCu yields in CIS a higher net donor concentration than ClSe; and (iv) in general, the system shows massive compensation of acceptors (CdIII,VCu) and donors (ClSe,CdCu,InCu).


Related Articles

  • Energetics of hydrogen in GeO2, Ge, and their interfaces. Ka Xiong; Liang Lin; Robertson, John; Kyeongjae Cho // Applied Physics Letters;7/18/2011, Vol. 99 Issue 3, p032902 

    The energetics of interstitial hydrogen in GeO2, Ge, and their interfaces are calculated using a hybrid density functional. We find that interstitial atomic hydrogen unexpectedly behaves as a donor in GeO2, like H in ZnO but unlike H in SiO2. At Ge:GeO2 interfaces, the donor electron can...

  • Low frequency noise in long channel amorphous In-Ga-Zn-O thin film transistors. Tze-Ching Fung; Gwanghyeon Baek; Kanicki, Jerzy // Journal of Applied Physics;Oct2010, Vol. 108 Issue 7, p074518 

    We investigated the low-frequency noise properties in the inverted-staggered amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with the silicon dioxide (SiO2) gate dielectric. The dependence of noise level on gate area indicates that the 1/f noise is the dominate source and the...

  • First-principles calculations of the electronic band structure of In4Sn3O12 and In5SnSbO12. Chung-Yuan Ren; Shan-Haw Chiou; Choisnet, J. // Journal of Applied Physics;1/15/2006, Vol. 99 Issue 2, p023706 

    The electronic band structures of M7O12 rhombohedral In4Sn3O12 and In5SnSbO12 are studied using the projector-augmented-wave method based upon the density-functional theory within the generalized gradient approximation. The cation ordering in both materials, as determined by means of ab initio...

  • Ambipolar conduction in transistors using solution grown InAs nanowires with Cd doping. Hang, Qingling; Wang, Fudong; Buhro, William E.; Janes, David B. // Applied Physics Letters;2/5/2007, Vol. 90 Issue 6, p062108 

    Nanowire field effect transistors have been fabricated using Cd doped InAs nanowires synthesized using a solution-liquid-solid technique. Both n-channel and p-channel characteristics have been observed, which implies that the surface Fermi level is not pinned in the conduction band. The...

  • Effects of the conduction-band nonparabolicity on the gain in bulk InAsSb semiconductor lasers. Paskov, P.P. // Journal of Applied Physics;6/1/1999, Vol. 85 Issue 11, p7967 

    Covers information on a study which investigated the role of the conduction-band nonparabolicity on the gain spectrum in bulk semiconductor lasers. Methodology; Calculations used in the study; Conclusions.

  • A study of vacancies and vacancy pair defects in 4H SiC grown by halide chemical vapor deposition. Zvanut, M. E.; Ngetich, G.; Chung, H. J.; Polyakov, A. Y.; Skowronski, M. // Journal of Materials Science: Materials in Electronics;Aug2008, Vol. 19 Issue 8/9, p678 

    The understanding of the structure and associated defect level of a point defect in SiC is important because the material is to be used both as a semiconductor and semi-insulator. Production of the latter is achieved by compensation of unavoidable impurities using defects that require more...

  • Impedance of an Encircling Coil due to a Cylindrical Tube with Varying Properties. Koliskina, Valentina // World Academy of Science, Engineering & Technology;Apr2011, Issue 52, following p666 

    Change in impedance of an encircling coil is obtained in the present paper for the case where the electric conductivity and magnetic permeability of a metal cylindrical tube depend on the radial coordinate. The system of equations for the vector potential is solved by means of the Fourier cosine...

  • Tailoring spin-orbit torque in diluted magnetic semiconductors. Li, Hang; Wang, Xuhui; Dogˇan, Fatih; Manchon, Aurelien // Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p192411 

    We study the spin orbit torque arising from an intrinsic linear Dresselhaus spin-orbit coupling in a single layer III-V diluted magnetic semiconductor. We investigate the transport properties and spin torque using the linear response theory, and we report here: (1) a strong correlation exists...

  • High-Resolution Conductivity Profile Measurements in Detonating Pressed Explosive. Ershov, A. P.; Satonkina, N. P.; Ivanov, G. M. // Technical Physics Letters;Dec2004, Vol. 30 Issue 12, p1048 

    An improved method for measuring the electric conductivity profile behind the detonation front in dense high explosives has been developed, which provides for a spatial resolution better than 0.1 mm. In comparison to the existing techniques, the proposed method ensures a more than tenfold...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics