Does In-bonding delay GaN-segregation in GaInAsN? A Raman study

Tite, T.; Pagès, O.; Tournié, E.
December 2004
Applied Physics Letters;12/13/2004, Vol. 85 Issue 24, p5872
Academic Journal
The longitudinal (LO) and transverse (TO) optical Ga–N phonons of thick as-grown Ga1-yInyAs1-xNx/GaAs (001) layers with x∼3%–4%, i.e., just above the N-solubility limit xs∼2% in GaAs, and y up to 30% are studied by Raman scattering. We observe a three-mode behavior which we associate with Ga–N modes from the isolated Ga4N complexes (∼460 cm-1), the Ga3InN ones (∼480 cm-1) and the GaN-segregated region (∼425 cm-1). The corresponding N fractions are derived via combined contour modeling of the three-mode TO and LO Ga–N Raman lineshapes. We find that substantial In-bonding minimizes GaN segregation only in a very narrow x range of ∼1% just above xs.


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