TITLE

Near room temperature droplet epitaxy for fabrication of InAs quantum dots

AUTHOR(S)
Jong Su Kim; Nobuyuki Koguchi
PUB. DATE
December 2004
SOURCE
Applied Physics Letters;12/13/2004, Vol. 85 Issue 24, p5893
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
By using the droplet epitaxy method, we succeed in fabricating the InAs quantum dots (QDs) with the spatial density of 4×1010/cm2 and an average lateral size of 20 nm on GaAs (001) at the droplets deposition temperature of 50 °C and subsequent annealing process under As4 flux. These QDs shows the intense photoluminescence even at room temperature indicating that high-quality InAs QDs can be fabricated by near room temperature droplets deposition and crystallization process by 400 °C in situ annealing.
ACCESSION #
15331875

 

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