Near room temperature droplet epitaxy for fabrication of InAs quantum dots

Jong Su Kim; Nobuyuki Koguchi
December 2004
Applied Physics Letters;12/13/2004, Vol. 85 Issue 24, p5893
Academic Journal
By using the droplet epitaxy method, we succeed in fabricating the InAs quantum dots (QDs) with the spatial density of 4×1010/cm2 and an average lateral size of 20 nm on GaAs (001) at the droplets deposition temperature of 50 °C and subsequent annealing process under As4 flux. These QDs shows the intense photoluminescence even at room temperature indicating that high-quality InAs QDs can be fabricated by near room temperature droplets deposition and crystallization process by 400 °C in situ annealing.


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